An advanced technique for measuring minority-carrier parameters and defect properties of semiconductors

Ahrenkiel, R. K.; Johnston, Steven W.

doi:10.1016/s0921-5107(02)00639-6

Cited by 34 publications

(13 citation statements)

References 16 publications

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“…There is a dramatic decrease in carrier lifetime and carrier mobility, both decreasing by a factor of two. The carrier lifetime decreases to about 3.0 ms. A mobility decrease is indicated by the reduction of signal amplitude, as the RCPCD amplitude is proportional to the ambipolar mobility [4]. Curve C is measured with white light bias adjusted to 106 mW/cm 2 .…”

Section: Resultsmentioning

confidence: 99%

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Recombination velocity of SiN<inf>x</inf>:H/silicon interfaces and the relationship of insulator charge.

Ahrenkiel

Feldman

George³

et al. 2009

2009 34th IEEE Photovoltaic Specialists Conference (PVSC)

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Hydrogenated Silicon nitride (SiNx:H) is used as an anti-reflection coating and passivating medium in crystalline silicon photovoltaic technology. In these studies, we deposited SiNx:H on a variety of silicon wafers by both the PBS™ remote plasma enhanced chemical vapor deposition process and the direct plasma enhanced chemical vapor deposition process. After deposition, the minority-carrier lifetime was measured by the resonance-coupled photoconductive decay (RCPCD) technique. From the lifetime data measured, we were able to calculate the surface recombination velocity. The lifetime measurements were also performed by RCPCD using an adjustable dc white light bias.

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Section: Resultsmentioning

confidence: 99%

“…After deposition, the minority-carrier lifetime was measured by the resonance-coupled photoconductive decay (RCPCD) technique [4]. From these lifetime data, we were able to calculate the surface recombination velocity.…”

Section: Introductionmentioning

confidence: 99%

Recombination velocity of SiN<inf>x</inf>:H/silicon interfaces and the relationship of insulator charge.

Ahrenkiel

Feldman

George³

et al. 2009

2009 34th IEEE Photovoltaic Specialists Conference (PVSC)

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“…It must be noted that an analysis of the interaction between a MHz electric field and a piece of matter under modulation of the conductivity for the configuration used (for example as used for QSSPC measurements) is missing, although an elementary equivalent circuit analysis was presented [15] in contrast to the case of GHz measurements [12,[16][17][18][19]. This is somewhat astonishing if compared to the efforts made for the interpretation of QSSPC data.…”

Section: Detection Of Excess Charge Carriersmentioning

confidence: 99%

The determination of charge‐carrier lifetime in silicon

Klein

Wuensch

Kunst³

2008

Physica Status Solidi (b)

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In this study, we report on a novel composite membrane system for pH‐responsive controlled release, which is composed of a porous membrane with linear grafted, positively pH‐responsive polymeric gates acting as functional valves, and a crosslinked, negatively pH‐responsive hydrogel inside the reservoir working as a functional pumping element. The proposed system features a large responsive release rate that goes effectively beyond the limit of concentration‐driven diffusion due to the pumping effects of the negatively pH‐responsive hydrogel inside the reservoir. The pH‐responsive gating membranes were prepared by grafting poly(methacrylic acid) (PMAA) linear chains onto porous polyvinylidene fluoride (PVDF) membrane substrates using a plasma‐graft pore‐filling polymerization, and the crosslinked poly(N,N‐dimethylaminoethyl methacrylate) (PDM) hydrogels were synthesized by free radical polymerization. The volume phase‐transition characteristics of PMAA and PDM were opposite. The proposed system opens new doors for pH‐responsive “smart” or “intelligent” controlled‐release systems, which are highly attractive for drug‐delivery systems, chemical carriers, sensors, and so on.

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“…The resonant-coupled photoconductive decay (RCPCD) technique [18][19][20][21] was used for measuring carrier lifetime in silicon and other semiconducting materials. Our system is a pump-probe technique, using an optical pump and a high-frequency probe.…”

Section: Resonance-coupled Photoconductive Decaymentioning

confidence: 99%

Relationship of Band-Edge Luminescence to Recombination Lifetime in Silicon Wafers

Ahrenkiel

Johnston

Metzger

et al. 2007

Journal of Elec Materi

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In recent years, intrinsic luminescence has been used as a method to characterize the recombination lifetime of crystalline silicon. The assumption is that the steady-state intrinsic photoluminescence at 1.09 eV (1.134 lm) can be related to the recombination lifetime. In this work, we measured the bandedge photoluminescence (PL) intensities of a number of single-crystal wafers. The resistivity in the wafer set ranges from 1 to 11,000 ohm-cm under constant excitation intensity. We then measured the PL spectra and recombination lifetimes of these wafer sets under a variety of conditions. The lifetime was measured using resonant-coupled photoconductive decay (RCPCD) in both air ambient and an iodine/methanol solution. The same procedure was used for the PL spectra. Plots of the measured lifetime versus the PL intensity showed weak correlation between the two quantities in air ambient. However, there is a positive relationship between the near-bandgap PL intensity and the recombination lifetime for passivated surfaces. Some fundamental physical reasons will be used to explain these results.

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An advanced technique for measuring minority-carrier parameters and defect properties of semiconductors

Cited by 34 publications

References 16 publications

Recombination velocity of SiN<inf>x</inf>:H/silicon interfaces and the relationship of insulator charge.

Recombination velocity of SiN<inf>x</inf>:H/silicon interfaces and the relationship of insulator charge.

The determination of charge‐carrier lifetime in silicon

Relationship of Band-Edge Luminescence to Recombination Lifetime in Silicon Wafers

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