Response to ‘‘Comment on ‘Mechanism responsible for the semi-insulating properties of low-temperature-grown GaAs’ ’’ [Appl. Phys. Lett. <b>67</b>, 1331 (1995)]

Liu, X.; Prasad, Amrita; Chen, Weimin; Kurpiewski, A.; Liliental‐Weber, Z.; Weber, E. R.

doi:10.1063/1.114531

Cited by 9 publications

(1 citation statement)

References 7 publications

(9 reference statements)

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“…[2][3][4] In addition to such metastable structures, low-temperature epitaxy is also of interest because it may be used to effect epitaxy on preprocessed integrated circuitry, or related structures that cannot withstand elevated temperature treatments.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of stoichiometric (100) GaAs at 75 °C

Taylor

Jesser

Martinka

et al. 1999

Journal of Applied Physics

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Molecular beam epitaxial growth of InAs/AlGaAsSb deep quantum well structures on GaAs substratesSurface evolution on vicinal GaAs(001) surfaces in the transition range from two-dimensional to step-flow growth Stoichiometric single crystal GaAs is grown at 75°C by a migration-enhanced-epitaxy ͑MEE͒ technique. The stoichiometry of the GaAs films can be controlled by adjusting the arsenic monolayer deposition time. For Ga-rich compositions, epitaxy breaks down and polycrystalline GaAs results. For stoichiometric GaAs, and As-rich compositions, epitaxy proceeds and specular stoichiometric films can be grown to significant thicknesses. Reflection high-energy electron diffraction patterns indicated some surface roughness that increased for compositions closer to those which were Ga rich. This work suggests that low-temperature growth by MEE results in limited-thickness-epitaxy ͑LTE͒ behavior for GaAs that is very different from low-temperature growth by conventional molecular beam epitaxy. The results of this work indicate the importance of stoichiometry, surface roughening, and surface diffusion phenomena in determining regimes where epitaxy occurs at low temperature. A maximum LTE epitaxial thickness of 300 nm was obtained at 75°C.

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Section: Introductionmentioning

confidence: 99%