Origin of Blue Luminescence in 
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-Doped 
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Nayak, Sanjay K.; Gupta, Mukul; Waghmare, Umesh V.; Shivaprasad, S. M.

doi:10.1103/physrevapplied.11.014027

Cited by 22 publications

(7 citation statements)

References 45 publications

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“…Therefore, high concentrations of Mg need to be incorporated to achieve high hole concentrations. [8][9][10][11] It is widely known that incorporating a high amount of Mg often results in the formation of Mg-enriched defects and clusters, leading to a decrease in free hole concentrations. [12][13][14] Attempts have been made to understand the formation of such defects and their atomic structures in Mg-doped GaN layers, where Mg is incorporated during GaN growth via metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).…”

Section: Introductionmentioning

confidence: 99%

Influence of implanted Mg concentration on defects and Mg distribution in GaN

Kumar

Uzuhashi

et al. 2020

Journal of Applied Physics

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Efficient acceptor activation in gallium nitride (GaN) achieved through Mg ion-implantation depends mainly on the concentration of implanted Mg ions and the post-implantation annealing process. In this study, we conducted correlative scanning transmission electron microscopy, atom probe tomography, and cathodoluminescence (CL) measurements on Mg-implanted GaN layers with the implanted concentration ranging from 1 × 10 17 cm −3 to 1 × 10 19 cm −3 . It was found that at the implanted concentration of ∼1 × 10 18 cm −3 , Mg atoms were randomly distributed with defects likely to be vacancy clusters whereas at the implanted concentration of ∼1 × 10 19 cm −3 , Mg-enriched clusters and dislocation loops were formed. From the CL measurements, the donor-acceptor pair (DAP) emissions from the implanted and un-implanted regions are obtained and then compared to analyze Mg activation in these regions. In the sample with Mg ∼1 × 10 19 cm −3 , the existence of Mg-enriched clusters and dislocations in the implanted region leads to a weaker DAP emission, whereas the absence of Mg-enriched clusters and dislocations in the sample with Mg ∼1 × 10 18 cm −3 resulted in a relatively stronger DAP emission.

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Section: Introductionmentioning

confidence: 99%

Influence of implanted Mg concentration on defects and Mg distribution in GaN

Kumar

Uzuhashi

et al. 2020

Journal of Applied Physics

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“…In our case, when the Mg doping is more than the self-compensation onset of 2.42 × 10 19 /cm 3 (450 sccm), it is worth noting that the activated hole concentrations still rise without a hole concentration reversion. However, the decrease in activation efficiency could be ascribed to the starting existence of high Mg doping-induced defects, for example, the formation of Mg interstitials [ 9 , 17 ], nitrogen vacancy V N [ 9 , 26 ], Mg Ga -V N complexes [ 11 , 27 ], and pyramidal inversion domain (PID) defects [ 28 , 29 ]. Another scenario could be the building possibility of Mg-N-Mg clusters.…”

Section: Resultsmentioning

confidence: 99%

“…However, the issue Nanomaterials 2021, 11, 1766 2 of 9 of low activation efficiency for Mg-doped p-GaN/AlGaN hetero-structures on the more economic Si substrates remains. As the Mg doping increases, the deep-level emission dominates in the photoluminescence (PL) and cathodoluminescence (CL) spectra [17,18]. This implies the formation of deeper donors to compensate holes or the creation of deeper Mg acceptor levels rather than shallow acceptor levels, further resulting in the difficulty to activate holes from the deep Mg acceptors to the valence band and decrease the activation efficiency.…”

Section: Introductionmentioning

confidence: 99%

High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT

Dai

Thu

et al. 2021

Nanomaterials

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The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the sample with a 450 sccm Cp2Mg flow rate reached a maximum value of 2.22%. No reversion of the hole concentration was observed due to the existence of stress in the designed sample structures. This is attributed to the higher Mg-to-Ga incorporation rate resulting from the restriction of self-compensation under compressive strain. In addition, by using an AlN interlayer (IL) at the interface of p-GaN/AlGaN, the activation rate can be further improved after the doping concentration reaches saturation, and the diffusion of Mg atoms can also be effectively suppressed. A high hole concentration of about 1.3 × 1018 cm−3 can be achieved in the p-GaN/AlN-IL/AlGaN structure.

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“…It is interesting to note that this dopant complex has been observed very recently and proposed as a possible origin of the blue PL band. [23]…”

Section: Complexes Of Mg Dopant and H Dopantmentioning

confidence: 99%

“…[12] These complexes have been proposed as the origins of various bands (peaks) in the photoluminescence (PL) spectra of Mg-doped GaN layers; for example, Mg Ga -H N produces the ultraviolet peak, [17] Mg Ga -V N is responsible for the red luminescence (RL) band, [11] and Mg Ga -Mg i is responsible for the blue band. [23] Although the Mg-related dopant-defect complexes have been studied for two decades, it is still an open question whether all the low-energy and high-concentration Mg-related complexes have been identified. As shown in Figure 1, there are at least six intrinsic defects (…”

mentioning

confidence: 99%

Triple‐Site Dopant–Defect Complexes in Mg–H‐Codoped GaN: First‐Principles Identification

Huang

Chen

2021

Physica Status Solidi (a)

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Gallium nitride has been extensively used in light-emitting diodes, high-frequency and high-voltage transistors, and lasers. [1][2][3][4] Design of these devices with high performance usually requires good n-type or p-type conductivity with high concentrations of free carriers. Although good n-type conductivity can be easily achieved in GaN, [5] good p-type doping is more difficult to achieved due to the difficulty in activation of p-type dopants. Mg is the most effective p-type dopant in GaN [6][7][8] because Mg Ga (Mg replacing Ga) is a relatively shallow acceptor and can produce hole carriers. However, the Mg Ga acceptors may form dopant-defect complexes with donor defects such as V N (nitrogen vacancy) or other dopants such as H (e.g., the H interstitial H i ). [9,10] The formed complexes, Mg Ga -V N and Mg Ga -H i , are chargecompensated and thus cannot be ionized to produce electron or hole carriers, so the donor-acceptor-compensated complexes impose a limit on the increase of hole concentration. [10][11][12] As V N has low formation energy and thus high concentration if GaN is doped into p-type with a low Fermi level [12,13] and hydrogen is an unavoidable dopant during different GaN growth processes such as metal-organic chemical-vapor deposition (MOCVD), hydride vapor-phase epitaxy (HVPE), and ammonia-based molecular-beam epitaxy (MBE), [14][15][16] the donor defects or dopants that can compensate the Mg Ga acceptors can be very abundant. Therefore, the donor-acceptor complexes are also abundant, causing severe compensation in GaN. To activate the Mg Ga acceptor, high-temperature annealing or electron-beam irradiation processes were introduced to dissociate complexes such as Mg Ga -H i . [8,16] Given the severe influences, the Mg-related dopant-defect complexes have attracted intensive attention in the past 20 years and interesting complexes have been reported apart from Mg Ga -V N and Mg Ga -H i . [17][18][19] Because the H dopants can also replace N, forming a H N substitutional defect (a defect complex V N -H i in which H is on the interstitial site near the N vacancy site), [20] which is also an effective donor and can compensate the acceptors, [21,22] the pioneering work of Lee et al. through both first-principles calculations and experimental observations showed that the Mg Ga -H N (Mg Ga -V N -H i ) complexes exist and are key components for understanding the Mg acceptor activation and passivation processes. [17] Furthermore, the Mg interstitial (Mg i ) can also compensate Mg Ga and form the Mg Ga -Mg i complex. [12] These complexes have been proposed as the origins of various bands (peaks) in the photoluminescence (PL) spectra of Mg-doped GaN layers; for example, Mg Ga -H N produces the ultraviolet peak, [17] Mg Ga -V N is responsible for the red luminescence (RL) band, [11] and Mg Ga -Mg i is responsible for the blue band. [23] Although the Mg-related dopant-defect complexes have been studied for two decades, it is still an open question whether all the low-energy and high-concentration Mg-relate...

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Origin of Blue Luminescence in Mg -Doped GaN

Cited by 22 publications

References 45 publications

Influence of implanted Mg concentration on defects and Mg distribution in GaN

Influence of implanted Mg concentration on defects and Mg distribution in GaN

High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT

Triple‐Site Dopant–Defect Complexes in Mg–H‐Codoped GaN: First‐Principles Identification

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