Origin, Influence, and Countermeasures of Defects in Perovskite Solar Cells

Abstract

Defects are considered to be one of the most significant factors that compromise the power conversion efficiencies and long‐term stability of perovskite solar cells. Therefore, it is urgent to have a profound understanding of their formation and influence mechanism, so as to take corresponding measures to suppress or even completely eliminate their adverse effects on device performance. Herein, the possible origins of the defects in metal halide perovskite films and their impacts on the device performance are analyzed, and then various methods to reduce defect density are introduced in detail. Starting from the internal and interfacial aspects of the metal halide perovskite films, several ways to improve device performance and long‐term stability including additive engineering, surface passivation, and other physical treatments (annealing engineering), etc., are further elaborated. Finally, the further understanding of defects and the development trend of passivation strategies are prospected.

Metal‐Halide Perovskite Crystallization Kinetics: A Review of Experimental and Theoretical Studies

“…XRD is the most commonly adopted technology to investigate perovskite crystallization properties. [58,59] As a direct detect method, the crystallization intensity and crystal phase compositions can be intuitively reflected in the XRD patterns. [40,60,61] By applying in-situ XRD test during the thermal annealing process, Pool et al successfully mapped the phase transition process of FAPbI 3 .…”

Towards high tin‐based halide organic‐inorganic perovskite photovoltaic cells efficiency improvement: SCAPS 1D modeling

“…But when investigating the effects of defects states will be varying defects density in the range of 10 13 : 10 17 cm À3 ½ in the bulk of active layer and at interfaces to be in agreement with previous works. 21,32,34 A Gaussian type is considered in this manuscript to describe the energy distribution of defects, since a neutral type defects was previously taken into account and the characteristic energy is set to 0.1 eV. Electron and hole capture cross section at defects interfaces is set equal to 2:10 14 cm À2 .…”

The disappearing additive: introducing volatile ethyl acetate into a perovskite precursor for fabricating high efficiency stable devices in open air

“…Apart from the outstanding photovoltaic performance, excellent temperature and moisture resistance of the perovskite film are also crucial for applicability, specifically for its commercialization. 54 To study the role of EA in perovskite stability, the normalized PCE of two PSCs (un-encapsulated), which were placed for 100 hours in the dark at 85 °C was measured and the data are shown in Fig. 6a.…”