Orientation effect on planar GaAs Schottky barrier field effect transistors

Lee, C. P.; Zucca, R.; Welch, B.M.

doi:10.1063/1.91917

Cited by 50 publications

(11 citation statements)

References 7 publications

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“…The and orientation dependencies of are key signatures of the piezoelectric effect. Similar dependencies reported for GaAs MESFET's with stressed dielectric overlayers have also been attributed to the piezoelectric effect [6], [7]. Hydrogen-induced degradation in GaAs PHEMT's with Tionly gates lead Chao [4] to speculate on the formation of TiH and a change in the Schottky barrier height.…”

Section: Resultssupporting

confidence: 52%

Hydrogen-induced piezoelectric effects in InP HEMT's

Blanchard

Alamo

Adams

et al. 1999

IEEE Electron Device Lett.

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Section: Resultssupporting

confidence: 52%

Hydrogen-induced piezoelectric effects in InP HEMT's

Blanchard

Alamo

Adams

et al. 1999

IEEE Electron Device Lett.

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“…The strain at the substrate-encapsulant interface also has an effect on the diffusion of the implanted impurities (8). This complexity is supported by the experimental evidence that many post-annealing impurity profiles cannot be accurately described by the simple diffusion theory.…”

Section: Introductionsupporting

confidence: 51%

Multizone Modeling of Impurity Redistribution in Ion‐Implanted Materials

Kwor

Araujo

1983

J. Electrochem. Soc.

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Implanted impurity redistribution has been observed during annealing of many ion‐implanted materials. Experimental evidence suggests some position dependence in the redistribution process. The tail region of ion‐implanted impurity profiles usually exhibits faster diffusion than the near‐surface region. In this paper, a multizone model for the redistribution of implanted impurities is presented. The implanted substrate is considered as a stratified medium with zones where a local diffusion equation is obeyed, and an effective diffusion coefficient is defined within each zone. The basic formulation of the model and its mathematical background are discussed. The multizone equations are solved using the Crank‐Nicolson method. A computer program is used to generate a plot of the post‐annealing redistributed impurity profile. The model is applied to the case of sulfur‐implanted normalGaAs for dose range of 4×1013 normalto 4×1015 cm−2 , with energies of 120 and 300 keV. Good agreement is obtained between the computer generated profile and the SIMS experimental profile.

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“…It has been known since the early 1980's that GaAs MESFETs exhibit short channel effects that depend on the orientation of the gate with respect to the substrate. It appears that the earliest work carried out in this area is that of Lee et al [1], who investigated the dependence of the electrical characteristics of MESFETs on their orientation. The devices were fabricated on (100) surfaces of semi-insulating GaAs substrates.…”

Section: Introductionmentioning

confidence: 99%

Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFETs

Ramirez

McNally

Cooper

et al. 1988

IEEE Trans. Electron Devices

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The results of a combined experimental and analytical investigation of the effects of mechanical stress on DC electrical parameters, particularly threshold voltage, in MESFETs are reported. The theoretical aspect of this study involves a two-dimensional finite element simulation of the same device structure on which measurements were made. In contrast with an approximate analytical calculation reported in the literature in which the stress concentrations which occur at the gate edges were represented by concentrated fine forces acting in the plane of the substrate surface, the substrate stresses and resultant piezoelectric charge distributions calculated in this study take into account the two-dimensional nature of the geometry of the gate. Accounting for the two-dimensional nature of the overlayer yields piezoelectric charge distributions that differ from those predicted using the more approximate concentrated force model. The experimental portion of this study involves measurement of DC parameters of devices during the application of external mechanical loads. These loads are intended to simulate mechanical stresses which arise during device processing. By introducing this stress without any additional thermal processing, the impact of residual stresses via the piezoelectric effect on parameters such as threshold voltage can be examined separately from other effects, such as stress enhanced diffusion. It is found that the piezoelectric effect can account for most of the anomalous shift in threshold voltage observed in real GaAs devices.

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Orientation effect on planar GaAs Schottky barrier field effect transistors

Cited by 50 publications

References 7 publications

Hydrogen-induced piezoelectric effects in InP HEMT's

Hydrogen-induced piezoelectric effects in InP HEMT's

Multizone Modeling of Impurity Redistribution in Ion‐Implanted Materials

Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFETs

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