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Abstract-We have carried out a systematic study of onstate breakdown in a sample set of InAlAs/InGaAs HEMT's using a new gate current extraction technique in conjunction with sidegate and temperature-dependent measurements. We find that as the device is turned on, the breakdown voltage limiting mechanism changes from a TFE-dominated process to a multiplication-dominated process. This physical understanding allows the creation of a phenomenological physical model for breakdown which agrees well with all our experimental results, and explains the relationship between BVon and the sheet carrier concentration. Our results suggest that depending on device design, either on-state or off-state breakdown can limit maximum power.Index Terms-Breakdown, HEMT, impact ionization, MOD-FET.

We have carried out a systematic study of onstate breakdown in a sample set of InAlAs/InGaAs HEMT's using a new gate current extraction technique in conjunction with sidegate and temperature-dependent measurements. We find that as the device is turned on, the breakdown voltage limiting mechanism changes from a TFE-dominated process to a multiplication-dominated process. This physical understanding allows the creation of a phenomenological physical model for breakdown which agrees well with all our experimental results, and explains the relationship between BVon and the sheet carrier concentration. Our results suggest that depending on device design, either on-state or off-state breakdown can limit maximum power.

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