Orientation dependence of GaAs growth in low-pressure OMVPE

MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires

“…A mask was prepared for selective growth by spincoating a highly diluted hydrogen-silsesquioxane (HSQ) [8] solution on GaAs (1 1 1)B [9] substrates. Subsequently, the samples were heated on a hot-plate in air for 20 min at 275 1C.…”

Surface orientation dependency for AlGaAs growth rate with/without HCl in MOCVD

“…The polar (1 1 1) A (Ga face) surface is chemically quite different than the (1 1 1) B (As face) surface. Thus, the surface morphology exhibits pronounced differences from the other surfaces studied here [15]. concentration of admolecules can sometimes influence the adsorption of subsequent admolecules on the growth surface and their incorporation into the growing crystal [16].…”

“…Kamon et al [15] pointed out that a nodeposition area on a (1 1 1) B surface was observed after GaAs was grown by MOCVD. In this study for Al x Ga 1Àx As growth, there appear flat, very slow-growth areas, as shown in Fig.…”

InGaAs quantum dots formed in tetrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition

“…28 In other reports, the inhibition of Ga adsorption on (111)B GaAs has been observed during the GaAs homoepitaxial growth in both molecular beam epitaxy (MBE) under As-rich growth conditions and MOCVD. 30,31 It is interpreted that the excessively adsorbed As atoms form the chemically stable trimer structures on the GaAs (111)B, and this specific Asrich reconstructed surface, recognized as (2 × 2) reconstruction in the case of MBE, deactivates the growth reactions between the surface As and the incoming Ga species. 32 This phenomena might be related to the growth of In-rich InGaAs at (111)B GaAs, as observed in our experiments.…”