Surface orientation dependency for AlGaAs growth rate with/without HCl in MOCVD

Dynamical behavior of methylchloride on GaAs(001)

“…SLM distinguishes the atomic layer etching from the other etchings and enables the layer thickness to completely control at the atomic level. The etching mechanisms in compound semiconductors were studied for various etchants such as Cl 2 [2], BCl 3 /SF 6 [3], HCl [4][5][6], Br 2 -H 2 O [7], CCl 4 [8] and C 2 H 5 I [9]. However, the atomic layer etching is still difficult for compound semiconductors.…”

“…The etching mechanism for the atomic layer etching should be analyzed using the atomically controlled surface and the well-defined etching molecule. Cl 2 [2], HCl [4][5][6] and other conventionally used etchants cannot be used for the atomic layer etching, because they violently react with the semiconductor surface and therefore the etching depth is not controlled at the atomic level.…”

Formation of multiple nanoscale twin boundaries that emit intense light in indirect-gap AlGaAs epilayers

“…Excess Al and Ga atoms, as well as residual oxygen atoms, can agglomerate in the dissolution pits, and they might act as the catalyst for the growth of twin boundaries [23], similar to boron atoms on a silicon substrate [24]. It is considered that the orientation of twin boundaries distributes unisotropically due to the difference of the growth rates on different atomic planes [22], and the growth rate of f1 1 1g A differs from that of f1 1 1g B for AlGaAs [10]. Also, the density of twin boundaries on f1 1 1g B is higher than that on f1 1 1g A for growth conditions which give the Volmer-Weber mode island deposits [25].…”

“…[10]. The crystallographic structure was analyzed by dark-field transmission electron microscopy (TEM) and high-resolution (HR-) TEM, and the composition was analyzed by energy www.elsevier.com/locate/apsusc Available online at www.sciencedirect.com Applied Surface Science 254 (2008) 7633-7637 dispersive X-ray spectroscopy (EDS) with spatial resolution about 1 nm, with a JEM-2010F microscope [11].…”