Organometallic vapor phase epitaxial growth of GaN on a 3c-SiC/Si(111) template formed by C+-ion implantation into Si(111) substrate

Yamamoto, Akio; Yamauchi, Takashi; Tanikawa, Takumi; Sasase, Masato; Ghosh, Bablu K.; Hashimoto, Akihiro; Ito, Y.

doi:10.1016/j.jcrysgro.2003.11.041

Cited by 22 publications

(19 citation statements)

References 14 publications

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“…If this low dose depth profile was valid for high dose ion implantation, we would have almost pure carbon at the depth of the peak concentration. However, as observed in some works, 6,8 sample temperature and depth extension dynamically redistribute the implanted atoms, and a wider profile with a composition closer to the Si:C ratio of 1:1 may be obtained.…”

Section: Methodsmentioning

confidence: 55%

“…[5][6][7][8][9][10][11][12] Some straightforward advantages are cheaper and larger substrate area, Si-SiC device integration, Si-GaN device integration through a SiC intermediate layer, and thermal dissipation improvement of GaN devices, since Si thermal conductivity is almost the same as the GaN. In this work, we are investigating the possibility of obtaining a SiC layer on Si͑111͒ by using ion implantation technique, which is deeply employed in Si processing steps.…”

Section: Introductionmentioning

confidence: 99%

“…In this work, we are investigating the possibility of obtaining a SiC layer on Si͑111͒ by using ion implantation technique, which is deeply employed in Si processing steps. Some authors have attempted such synthesis, [5][6][7][8] almost all of them into Si͑111͒, since SiC and GaN can be also found in the hexagonal symmetry. 1 Lindner, 8 however, implanted C into Si͑100͒…”

Section: Introductionmentioning

confidence: 99%

“…Yamamoto et al 6 employed a procedure similar to Lindner,8 but they used Si͑111͒ wafers. Yamamoto et al 6 performed postimplantation annealing under O 2 atmosphere and a subsequent etching of the oxidized layer.…”

Section: Introductionmentioning

confidence: 99%

“…Yamamoto et al 6 performed postimplantation annealing under O 2 atmosphere and a subsequent etching of the oxidized layer. By performing refelection high-energy electron diffraction ͑RHEED͒ pattern on the etched surface, they verified the presence of a single crystalline cubic-SiC layer.…”

Section: Introductionmentioning

confidence: 99%

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Ion beam synthesis of cubic-SiC layer on Si(111) substrate

Maltez

Oliveira

Reis

et al. 2006

Journal of Applied Physics

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We have investigated SiC layers produced by ion beam synthesis on Si͑111͒ substrates using different procedures. Bare Si͑111͒ and SiO 2 /Si͑111͒ structures were implanted with carbon at 40 keV up to a fluence of 4 ϫ 10 17 cm −2 at a temperature of 600°C. Postimplantation annealing was carried out at 1250°C for 2 h in pure O 2 or Ar ͑with 1% of O 2 ͒. A SiC layer was synthesized for all the procedures involving annealing under Ar. However, for the samples annealed under pure O 2 flux, only that employing implantation into the bare Si͑111͒ resulted in SiC synthesis. Rutherford backscattering spectrometry shows that, after annealing, the stoichiometric composition is obtained.Transmission electron microscopy measurements demonstrate the synthesis of cubic-SiC layers that are completely epitaxial to the Si͑111͒ substrate. However, there is a high density of nanometric twins, stacking faults, and also narrow amorphous inclusions of laminar shape between the crystalline regions. The procedure based on high temperature implantation through a SiO 2 cap, etching the cap off, 1250°C postimplantation annealing under Ar ambient ͑with 1% of O 2 ͒, and final etching has shown advantages from the point of view of surface flatness and increased layer thickness, keeping the same layer epitaxy and accurate composition.

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Section: Methodsmentioning

confidence: 55%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Ion beam synthesis of cubic-SiC layer on Si(111) substrate

Maltez

Oliveira

Reis

et al. 2006

Journal of Applied Physics

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A comparative study on MOVPE InN films grown on 3c‐SiC/Si(111) and sapphire

Kobayashi

Cho

Sawazaki

et al. 2005

Physica Status Solidi (a)

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This paper reports the MOVPE growth of InN on a 3c‐SiC/Si template formed by C+‐ion implantation into Si(111). Properties of grown films on the template are compared with those grown on sapphire in the same run. By employing the nitridation process of the template at 900 °C for 30 min just before the GaN buffer growth, the buffer layer becomes to show uniform nucleation. This is due to the improved wettability of GaN layer on the template by the formation of Si–N bonds on the Si‐polar SiC layer. The surface mophology of InN film grown on the nitrided template is similar to that for a film grown on a sapphire. The film on the nitrided template shows strong photoluminescence with a peak energy of 0.70 eV at room temperature. The carrier concentration and Hall mobility are 7.6 × 1018 cm–3 and 630 cm2/Vs, respectively. These data are comparable to those for InN grown on the sapphire (0.71 eV, 6.5 × 1018 cm–3 and 870 cm2/Vs). Thus, the nitridation process of the 3c‐SiC/Si template is found to be effective to obtain high‐quality InN film. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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MOVPE InN on a 3c‐SiC/Si(111) template formed by C ⁺ ‐ion implantation into Si(111)

Yamamoto

Kobayashi

Yamauchi

et al. 2005

phys. stat. sol. (c)

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This paper reports a new interlayer for the epitaxial growth of InN on Si. A 3c-SiC layer as an interlayer is formed by carbon (C + )-ion implantation into Si(111) wafer. After the C + -ion implantation with an energy 180 keV at 600 ºC, the Si(111) wafer is annealed in O 2 atmosphere at 1250 ºC for 2 h. Layers of SiO 2 , Si and polycrystalline SiC are successively removed and a single-crystalline 3c-SiC layer is exposed successfully on the surface. MOVPE growth of InN is performed at 600 ºC on a 3c-SiC/Si(111) template with a low-temperature (550 ºC) GaN buffer. The grown film is confirmed to be single-crystalline wurtzite InN by the RHEED patterns. The film shows an intense photoluminescence with peak energy of 0.73 eV at room temperature. Carrier concentration and Hall mobility are 1.3 x 10 19 cm -3 and 490 cm 2 /Vs, respectively. They are slightly inferior to those for InN films grown on sapphire. The crystalline quality of InN is found to be improved with increasing the crystalline quality of the 3c-SiC layer formed by the implantation.

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Organometallic vapor phase epitaxial growth of GaN on a 3c-SiC/Si(111) template formed by C+-ion implantation into Si(111) substrate

Cited by 22 publications

References 14 publications

Ion beam synthesis of cubic-SiC layer on Si(111) substrate

Ion beam synthesis of cubic-SiC layer on Si(111) substrate

A comparative study on MOVPE InN films grown on 3c‐SiC/Si(111) and sapphire

MOVPE InN on a 3c‐SiC/Si(111) template formed by C ⁺ ‐ion implantation into Si(111)

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Organometallic vapor phase epitaxial growth of GaN on a 3c-SiC/Si(111) template formed by C+-ion implantation into Si(111) substrate

Cited by 22 publications

References 14 publications

Ion beam synthesis of cubic-SiC layer on Si(111) substrate

Ion beam synthesis of cubic-SiC layer on Si(111) substrate

A comparative study on MOVPE InN films grown on 3c‐SiC/Si(111) and sapphire

MOVPE InN on a 3c‐SiC/Si(111) template formed by C + ‐ion implantation into Si(111)

Contact Info

Product

Resources

About

MOVPE InN on a 3c‐SiC/Si(111) template formed by C ⁺ ‐ion implantation into Si(111)