This paper reports the MOVPE growth of InN on a 3c‐SiC/Si template formed by C+‐ion implantation into Si(111). Properties of grown films on the template are compared with those grown on sapphire in the same run. By employing the nitridation process of the template at 900 °C for 30 min just before the GaN buffer growth, the buffer layer becomes to show uniform nucleation. This is due to the improved wettability of GaN layer on the template by the formation of Si–N bonds on the Si‐polar SiC layer. The surface mophology of InN film grown on the nitrided template is similar to that for a film grown on a sapphire. The film on the nitrided template shows strong photoluminescence with a peak energy of 0.70 eV at room temperature. The carrier concentration and Hall mobility are 7.6 × 1018 cm–3 and 630 cm2/Vs, respectively. These data are comparable to those for InN grown on the sapphire (0.71 eV, 6.5 × 1018 cm–3 and 870 cm2/Vs). Thus, the nitridation process of the 3c‐SiC/Si template is found to be effective to obtain high‐quality InN film. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
This paper reports the residual tensile stress in GaN grown on 3c-SiC/Si template formed by C + -ion implantation into Si(111). A GaN layer is grown using MOVPE method with the conventional two-step growth. The residual tensile stress is dependent on the fabrication conditions of the template, such as substrate temperature for implantation, acceleration voltage of C + -ions, temperature and time for the postimplantation annealing of Si wafers. It is found that the substrate temperature during implantation is a predominant factor. The residual stress in GaN layer is reduced from 1.3 to 0.45 GPa when the substrate temperature during implantation is changed from 400 to 600 ºC. The stress is also decreased by increasing accelerating voltage for implantation and post-implantation annealing time. The residual tensile stress of 0.45 GPa is the lowest one ever reported for GaN on Si.
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