Organic thin-film transistor bias-dependent capacitance compact model in accumulation regime

Castro-Carranza, A.; Estrada, M.; Nolasco, J. C.; Cerdeira, A.; Marsal, Lluís F.; Iñı́guez, Benjamı́n; Pallarès, Josep

doi:10.1049/iet-cds.2010.0372

Cited by 24 publications

(18 citation statements)

References 22 publications

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“…B. Approach based on Castro-Carranza et al [37] and Marinov et al [38] The models by Castro-Carranza et al [37] and Marinov et al [38] are also drift-based models. However, they implement the -dependent mobility (5) in the drift current equation (1) before it is being integrated rather than in (4).…”

Section: (4)mentioning

confidence: 99%

“…Comparison between the model by Estrada et al [34] or (9) with constant and without improved output asymptotic behavior, the model by Castro-Carranza et al [37] or (13), and the measured output characteristics. Reproduced from [37]. current model is written as [ Fig.…”

Section: (4)mentioning

confidence: 99%

“…The quasi-static assumption is that the rate of change of the biasing is slow enough, so that at any time and position in the channel the charges are identical to those under DC biasing [43], i.e., it does not consider frequency effects. The first aim of recent AC model for OFETs has been to encompass all operation regimes [37], [44]. The second aim was to describe the frequency dependence of -characteristics [45] and experimental validation of such behavior [46].…”

Section: Summary Of Recent Ac Modelsmentioning

confidence: 99%

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Advances in Compact Modeling of Organic Field-Effect Transistors

Jung

Bonnassieux

Horowitz

et al. 2020

IEEE J. Electron Devices Soc.

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In this review, recent advances in compact modeling of organic field-effect transistors (OFETs) are presented. Despite the inherent strength for printed flexible electronics and the extremely aggressive research conducted over more than three decades, the OFET technology still seems to remain at a relatively low technological readiness level. Among various possible reasons for that, the lack of a standard compact model, which effectively bridges the device-and system-level development, is clearly one of the most critical issues. This paper broadly discusses the essential requirements, up-to-date progresses, and imminent challenges for the OFET compact device modeling toward a universal, physically valid, and applicable description of this fast-developing technology.

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Section: (4)mentioning

confidence: 99%

Section: (4)mentioning

confidence: 99%

Section: Summary Of Recent Ac Modelsmentioning

confidence: 99%

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Advances in Compact Modeling of Organic Field-Effect Transistors

Jung

Bonnassieux

Horowitz

et al. 2020

IEEE J. Electron Devices Soc.

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“…Some assumptions are required to estimate the total charge such as the quasistatic assumption [56,57] and the linear partition assumption of the channel charge to drain charge Q D and source charge Q S for MOS transistors [58] and also elaborated theoretically and numerically for Sibased TFTs [59] and OTFTs [46]. Therefore, using the dynamic model developed in reference [50], we can calculate the quasistatic charge in the pentacene TFTs channel as follows:…”

Section: Quasistatic Chargesmentioning

confidence: 99%

“…To model the dynamic electrical behavior of OTFTs is usually done by adopting the quasistatic approach developed in inorganic semiconductor MOSFETs devices. In this sense, several theoretical studies have been reported on the modeling of the capacitance behavior of OTFTs [43][44][45][46].…”

Section: Introductionmentioning

confidence: 99%

Static and dynamic modeling of organic thin film transistors: effect of channel length on the Mayer–Neldel rule energy and quasistatic capacitances

Arfaoui

Boukhili

Mahdouani

et al. 2018

Eur. Phys. J. Appl. Phys.

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In this work, pentacene based thin film transistors (TFTs) with different channel lengths (L = 2.5, 5, 10 and 20 μm) have been fabricated and characterized electrically. Exploiting the electrical characteristics, we have analyzed the channel length effect on the key parameters of fabricated TFTs. We found that the performance of pentacene-TFTs was enormously enhanced by the reduction of channel length .We have also examined the influence of contact and channel resistances (RC and Rch) on the electrical proprieties of fabricated TFTs, using the transmission line method (TLM). Then, we have modeled the dependence of the total resistance RT on the gate voltage VG using the grain boundary trapping Meyer–Neldel rule (GBT-MNR) model and we have successfully reproduced, the output characteristic of pentacene TFTs using the overall resistance extracted from the GBT-MNR model. Finally, in order to investigate the channel length effect on the dynamic behavior of fabricated devices, we have reported a dynamic model based on the quasistatic assumptions which were used for metal-oxide-semiconductor field-effect transistor (MOSFET). Accordingly, we have presented a simple small-signal equivalent circuit to calculate theoretically the capacitances of pentacene-TFTs for different channel lengths.

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Ditch and elevated organic thin film transistor‐based improved common source voltage amplifier: Frequency response characteristics and analytical modeling

Mittal

2021

J Soc Info Display

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In this work, the frequency response of single gate organic thin film transistor (OTFT)‐based common source (CS) voltage amplifier is analyzed. Also, the contact‐channel resistance models are developed to validate the lower/upper cutoff frequency and mid‐band gain. The bandwidth of single gate bottom contact (BC) OTFT‐based amplifier is found to be 16 GHz, but the gain is quite low than the predicted due to its lower transconductance. Surprisingly, voltage gain is improved by four times (12.6 dB more) for dual gate TFT‐based amplifier. Moreover, the bandwidth (1 MHz) is also reasonably good. On applying top gate, biasing the gain is enhanced by 46%. Furthermore, two modified single gate BC structures, ditch and elevated source/drain (S/D) contacts, are incorporated to further augment the amplifier characteristics. Correspondingly, it shows a significant enhancement of 45% and 39% in the gain than that of normal BC. Additionally, the bandwidth is observed to be large and obtained as 100 and 96 MHz, which is also close to the expected analytically.

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Organic thin-film transistor bias-dependent capacitance compact model in accumulation regime

Cited by 24 publications

References 22 publications

Advances in Compact Modeling of Organic Field-Effect Transistors

Advances in Compact Modeling of Organic Field-Effect Transistors

Static and dynamic modeling of organic thin film transistors: effect of channel length on the Mayer–Neldel rule energy and quasistatic capacitances

Ditch and elevated organic thin film transistor‐based improved common source voltage amplifier: Frequency response characteristics and analytical modeling

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