P-type organic thin-film transistors (OTFTs), in which the active semiconductor is made of pentacene with silicon dioxide as a gate insulator, were fabricated and characterized. The effects of humidity on the electrical characteristics of pentacene based thin-film transistors (pentacene-TFTs) in the linear and saturation regimes were investigated. We report the variation of the electrical parameters by relative humidity (RH) extracted from the experimental electrical characteristics current-voltage of pentacene-TFT devices. We show that the diffusion of water molecules (H 2 O), the creation of acceptor states due to the presence of oxygen and the formation of clusters in the pentacene active layer considerably affect the stability and the performances of pentacene-TFTs. The degradation of electrical parameters of the pentacene-TFTs under relative humidity (RH) can be recovered with a simple pumping under vacuum (3×10 -5 to 5×10 -5 mbar). We also show that the changes introduced by the effects of humidity are reversible. Moreover the pentacene-TFT presents an intensive response for a high relative humidity (RH=57%), which could be used for a humidity detection device technology.

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Aquesta és una còpia de la versió draft d'un article publicat a Superlattices and superestructureshttp://hdl.handle.net/2117/102643 Boukhili, W., Mahdouani, M., Bourguiga, R., Puigdollers, J. Experimental study and analytical modeling of the channel length influence on the electrical characteristics of small-molecule thin-film transistors. " Superlattices and microstructures", 1 Juliol 2015, vol. 83, p. 224-236. DOI 10.1016/j.spmi.2015