Abstract:We introduce a rational design approach to high-performance multi-valued logic circuits. Taking an organic-based ternary inverter as a model system, robust input parameters to a two-dimensional finite-element solver are estimated....
“…Their study showed that the temperature dependencies of the V peak and I peak were consistent with those of the threshold voltages. The thickness of the semiconductor film also influences the threshold voltage, as demonstrated by Jo et al , 34 who performed two-dimensional finite-element simulations to systematically investigate the impact of film thickness on the threshold voltage. They noted that channel thickness must be optimized to improve device performance.…”
Section: Fundamentals Of Antiambipolar Transistorsmentioning
confidence: 98%
“…Other influential parameters on the AAT properties are the channel lengths (L p and L n for the p-and n-channels, respectively), and the ratio of L p /L n . 34,35 Especially as the lateral distribution of the applied V D is determined by these length parameters, the carrier accumulation and depletion in each semiconductor region are strongly affected. In fact, experimental data has confirmed that an optimized L p /L n increased I peak and reduced V peak .…”
Section: Materials Advances Reviewmentioning
confidence: 99%
“…Theoretical simulations have played a leading role not only in understanding the relevant fundamentals, but also in designing the organic MVL circuit geometries and selecting constituent materials. 32,34,35 Kim and his colleagues showed that optimization of the channel thickness (t osc ), channel lengths (L p , L n ), and L p /L n ratio was necessary to improve the…”
This paper briefly reviews recent progress in antiambipolar transistor (AAT) development. A variety of semiconducting materials, such as two-dimensional (2D) atomic layers, carbon nanotubes, and organic semiconductors (OSCs), have been...
“…Their study showed that the temperature dependencies of the V peak and I peak were consistent with those of the threshold voltages. The thickness of the semiconductor film also influences the threshold voltage, as demonstrated by Jo et al , 34 who performed two-dimensional finite-element simulations to systematically investigate the impact of film thickness on the threshold voltage. They noted that channel thickness must be optimized to improve device performance.…”
Section: Fundamentals Of Antiambipolar Transistorsmentioning
confidence: 98%
“…Other influential parameters on the AAT properties are the channel lengths (L p and L n for the p-and n-channels, respectively), and the ratio of L p /L n . 34,35 Especially as the lateral distribution of the applied V D is determined by these length parameters, the carrier accumulation and depletion in each semiconductor region are strongly affected. In fact, experimental data has confirmed that an optimized L p /L n increased I peak and reduced V peak .…”
Section: Materials Advances Reviewmentioning
confidence: 99%
“…Theoretical simulations have played a leading role not only in understanding the relevant fundamentals, but also in designing the organic MVL circuit geometries and selecting constituent materials. 32,34,35 Kim and his colleagues showed that optimization of the channel thickness (t osc ), channel lengths (L p , L n ), and L p /L n ratio was necessary to improve the…”
This paper briefly reviews recent progress in antiambipolar transistor (AAT) development. A variety of semiconducting materials, such as two-dimensional (2D) atomic layers, carbon nanotubes, and organic semiconductors (OSCs), have been...
“…Therefore, an experimental screening and prioritization of these factors can generally be a demanding task. To solve this issue, recent studies have employed a multiparameteric simulation and modeling approach to provide both fundamental insights and practical engineering guidelines for OHTs and related systems. − If we take it one step further, it might become even possible that totally new materials combinations and device concepts are predicted from simulation, enabling sharply focused research for new applications.…”
Creating
a tightly interacting semiconductor heterostructure and
incorporating it into a transistor architecture is an important trend
in materials research. This Spotlight on Applications aims to provide
essential understanding of emerging high-performance organic heterojunction
transistors with various materials, designs, and fabrication methods.
This article also evaluates the current status of organic heterojunction
transistor technology to clarify its future engineering challenges
and opportunities. A special focus is placed on systematic classification
of representative device structures to help distinguish between a
wide variety of reported systems and to underline key physical mechanisms
and design strategies most intrinsic to each of these platforms.
“…However, the carrier-transport mechanism remains unclear although the transport has been explained in analogy with a shoot-through current (STC) in a CMOS inverter. [18][19][20][21][22][23][24][25] Thus, revealing the carrier-transport mechanism is a critical issue to clarify the origin of the NDT and improve the device's performance. Herein, we use operando photoemission electron microscopy (PEEM) to tackle this issue.…”
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