Organic field-effect transistors

Małachowski, M. J.; Żmija, Józef

doi:10.2478/s11772-010-0008-9

Cited by 53 publications

(23 citation statements)

References 55 publications

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“…Organic semiconductors are promising materials for a large range of electronic applications. [1][2][3][4] Their flexibility and tunability are advantageous for organic photovoltaics or diodes, but their charge carrier mobility is still moderate compared to inorganic semiconductors. 5 The experimental and computational quest for OSs with larger mobility is hampered by insufficient knowledge of the charge transport (CT) mechanism in such materials.…”

Section: Introductionmentioning

confidence: 99%

How to calculate charge mobility in molecular materials from surface hopping non-adiabatic molecular dynamics – beyond the hopping/band paradigm

Carof

Giannini

Blumberger

2019

Phys. Chem. Chem. Phys.

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Charge transport in high mobility organic semiconductors is in an intermediate regime between small polaron hopping and band transport limits. We have recently shown that surface hopping non-adiabatic molecular dynamics is a powerful method for prediction of charge transport mechanisms in organic materials and for near-quantitative prediction of charge mobilities at room temperature where the effects of nuclear zero-point motion and tunneling are still relatively small [S. Giannini et al., Nat.Commun., 2019, 10, 3843]. Here we assess and critically discuss the extensions to Tully's original method that have led to this success: (i) correction for missing electronic decoherence, (ii) detection of trivial crossings and (iii) removal of decoherence correction-induced spurious charge transfer. If any one of these corrections is not included, the charge mobility diverges with system size, each for different physical reasons. Yet if they are included, convergence with system size, detailed balance and good internal consistency are achieved.

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Section: Introductionmentioning

confidence: 99%

How to calculate charge mobility in molecular materials from surface hopping non-adiabatic molecular dynamics – beyond the hopping/band paradigm

Carof

Giannini

Blumberger

2019

Phys. Chem. Chem. Phys.

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“…This feature allows OFETs to operate as a type of amplifier or a transducer through converting a voltage or potential signal into a current response [128]. More details of the principles, understanding the structural, and electrical properties of materials used to construct OFETs have been reviewed elsewhere [128,129].…”

Section: Organic Semiconductor Inksmentioning

confidence: 99%

Integration of additive manufacturing and inkjet printed electronics: a potential route to parts with embedded multifunctionality

et al. 2016

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-Additive manufacturing, an umbrella term for a number of different manufacturing techniques, has attracted increasing interest recently for a number of reasons, such as the facile customisation of parts, reduced time to manufacture from initial design, and possibilities in distributed manufacturing and structural electronics. Inkjet printing is an additive manufacturing technique that is readily integrated with other manufacturing processes, eminently scalable and used extensively in printed electronics. It therefore presents itself as a good candidate for integration with other additive manufacturing techniques to enable the creation of parts with embedded electronics in a timely and cost effective manner. This review introduces some of the fundamental principles of inkjet printing; such as droplet generation, deposition, phase change and post-deposition processing. Particular focus is given to materials most relevant to incorporating structural electronics and how post-processing of these materials has been able to maintain compatibility with temperature sensitive substrates. Specific obstacles likely to be encountered in such an integration and potential strategies to address them will also be discussed.

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“…In recent years, many studies have been devoted to improving the characteristics of organic thinfilm transistors (OTFTs) [2]. Pentacene organic semiconductors have become one of the most promising materials for future thin, light, and flexible display applications.…”

Section: Introductionmentioning

confidence: 99%

Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

Sarma¹,

Saikia²,

Saikia³

et al. 2010

Braz. J. Phys.

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We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd 2 O 3 . Use of high dielectric constant (high-k) gate insulator Nd 2 O 3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 10 4 and mobility is 0.13cm 2 /V.s. Pentacene film is deposited on Nd 2 O 3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature.

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Organic field-effect transistors

Cited by 53 publications

References 55 publications

How to calculate charge mobility in molecular materials from surface hopping non-adiabatic molecular dynamics – beyond the hopping/band paradigm

How to calculate charge mobility in molecular materials from surface hopping non-adiabatic molecular dynamics – beyond the hopping/band paradigm

Integration of additive manufacturing and inkjet printed electronics: a potential route to parts with embedded multifunctionality

Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

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