Ordered vacancy compound CuIn3Se5 on GaAs (100): Epitaxial growth and characterization

Abstract

Epitaxial growth of the ordered vacancy compound CuIn3Se5 has been achieved on GaAs (100) by molecular beam epitaxy from Cu2Se and In2Se3 sources. Electron probe microanalysis and x-ray diffraction have confirmed the composition for the 1-3-5 phase and that the films are single-crystal CuIn3Se5 (100). Transmission electron microscopy characterization of the material also showed it to be single crystalline. Structural defects in the layer consisted mainly of stacking faults. Photoluminescence measurements performed at 7.5 K indicate that the band gap is 1.28 eV. Raman spectra reveal a strong polarized peak at 152 cm−1, which is believed to arise from the totally symmetric vibration of the Se atoms in the lattice.

Interaction of Atomic Hydrogen with the Surface of Cu-llII-V12 Chalcopyrite Semiconductors-A Method for Controlled Stoichiometry Variation

“…We conclude, therefore, that the microstructure of the modified layer could be characterised by domains on a nanometer scale. In contrast to previous reports [ 10,11,12], the 13-phase related Raman band of our hydrogenated sample is not centered at 154 cm-, but shifted to 148cm'. Moreover, this shift is correlated to the hydrogenation conditions.…”

“…One is the CuInSe 2 ion laser are labeled as (*). compounds (OVC or 13-phase) in the In-rich Cu-In-Se system, such as Cu 2 1n 4 Se 7 and Culn 3 Se5 [10,11,12]. The polarisation dependence of this band implies that most of its intensity belongs to F, symmetry, as reported for OVC compounds in [ 12].…”

Copper Indium Selenides and Related Materials for Photovoltaic Devices

“…Because the A 1 mode involves only anion displacement, with the cations at rest, this shift has been attributed to a weakening of the force constants coupling the anions to the lattice by the prevalence of cation vacancies in the β-phase. 110 Finally, the phonon structure of the CuAu crystallographic polytype of CuInSe 2 has been published recently. 72…”

Cation sublattice stacking faults in Cu-rich chalcopyrite CuInSe2

“…Kiely et al give a fairly complete survey of the references for a number of these techniques. [7][8][9] The nature of defects associated with Cu enrichment has not been investigated, although a method for systematic investigation of these defects by diffuse electron beam scattering has been proposed. 12 This would suggest that careful study of these defects and their correlation with optical properties should be interesting.…”