2009
DOI: 10.1109/jstqe.2008.2010334
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Optoelectronic Oscillators Using Direct-Modulated Semiconductor Lasers Under Strong Optical Injection

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Cited by 60 publications
(24 citation statements)
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“…Subsequently, Devgan et al proposed an all-photonic-gain OEO at 10 GHz using a specific carrier suppression technique of a low-biased MZM (37), as shown in Figure 11a, and it exhibited phase noise at least 10 dB lower than that delivered from the same OEO circuit using an RF amplifier. Without any temperature stabilization, Sung et al used a directly modulated edge-emitting laser under strong optical injection to demonstrate a 20 GHz OEO with a phase noise of 123 dBc/Hz at 5 kHz frequency offset (38), as shown in Figure 11b. After injection locking with a positively detuned frequency, the slave laser cavity mode would redshift to induce a resonant amplification on the modulation sideband, which exhibits a high narrowband RF modulation efficiency.…”
Section: Y(t) Y(t-t)mentioning
confidence: 99%
“…Subsequently, Devgan et al proposed an all-photonic-gain OEO at 10 GHz using a specific carrier suppression technique of a low-biased MZM (37), as shown in Figure 11a, and it exhibited phase noise at least 10 dB lower than that delivered from the same OEO circuit using an RF amplifier. Without any temperature stabilization, Sung et al used a directly modulated edge-emitting laser under strong optical injection to demonstrate a 20 GHz OEO with a phase noise of 123 dBc/Hz at 5 kHz frequency offset (38), as shown in Figure 11b. After injection locking with a positively detuned frequency, the slave laser cavity mode would redshift to induce a resonant amplification on the modulation sideband, which exhibits a high narrowband RF modulation efficiency.…”
Section: Y(t) Y(t-t)mentioning
confidence: 99%
“…In order to increase the oscillating frequency and improve performance, an optically injected OEO (OIL-OEO) has been demonstrated [64]. In this configuration, a slave laser in the OEO cavity is optically injection locked by a master laser.…”
Section: Oeo With Other Optical Modulatorsmentioning
confidence: 99%
“…Since RF resonator-based oscillator technology can not match all advantages of photonic systems, there has been a great search of OEO configurations capable to generate ultra-pure RF carriers in both electrical and optical domains. Several OEO systems have been proposed over the last few years, including photonic oscillators based on InP monolithic oscillators [8], or using direct modulated semiconductor lasers and optical/optoelectronic injection schemes [9]. However, these configurations either are too complex or do not meet all the photonic RF systems OEO requirements.…”
Section: Contribution To Technology Innovationmentioning
confidence: 99%
“…This five port RTD based OEO circuit eliminates the need of discrete components such as RF amplifiers, RF couplers and filters, and corresponds to a significant simplification when compared to previously reported optoelectronic oscillators [8,9,12]. The RTD-OEO circuit proposed here aims to fulfill the needs of photonic RF systems and is much simpler and flexible due to RTD-OW optoelectronic nonlinearities and the RTD wide bandwidth negative differential conductance (NDC) characteristic.…”
Section: Novel Optoelectronic Oscillators For Photonic Rf Systemsmentioning
confidence: 99%