By using strong optical injection locking, we report resonance frequency enhancement in excess of 100 GHz in semiconductor lasers. We demonstrate this enhancement in both distributed feedback (DFB) lasers and vertical-cavity surface-emitting lasers (VCSELs), showing the broad applicability of the technique and that the coupling Q is the figure-of-merit for resonance frequency enhancement. We have also identified the key factors that cause low-frequency roll-off in injection-locked lasers. By increasing the slave laser's DC current bias, we have achieved a record intrinsic 3-dB bandwidth of 80 GHz in VCSELs.
We report the experimental demonstration of tunable ultraslow light using a 1.55 um vertical-cavity surface-emitting laser (VCSEL) at room temperature. By varying the bias current around lasing threshold, we achieve tunable delay of an intensity modulated signal input. Delays up to 100 ps are measured for a broadband signal with modulation frequency of 2.8 GHz. With a VCSEL design optimized for amplification and leveraging the scalability of VCSEL arrays, delays of multiple modulation periods are feasible.
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