Optimum Noise Measure Terminations for Microwave Transistor Amplifiers (Short Paper)

Poole, Clive; Paul, D.K.

doi:10.1109/tmtt.1985.1133207

Cited by 40 publications

(29 citation statements)

References 9 publications

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“…Furthermore, the was set to 1400 K based on cryogenic measurements of discrete transistors presented in [15]. The small-signal gate-to-source resistance and [16] for a 2f30-m device (note that the simulation does not take into account matching network or waveguide probe transition losses). parasitic access resistances were assumed to contribute thermal noise at the physical temperature.…”

Section: Cryogenic Measurements and Noise Modellingmentioning

confidence: 99%

A WR4 Amplifier Module Chain With an 87 K Noise Temperature at 228 GHz

Varonen

Samoska

Fung

et al. 2015

IEEE Microw. Wireless Compon. Lett.

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In this letter we report an ultra-low-noise amplifier module chain in the WR4 frequency range. The amplifier chips were fabricated in a 35 nm InP HEMT technology and packaged in waveguide housings utilizing quartz E-plane waveguide probes. When cryogenically cooled to 22 K and measured through a mylar vacuum window, the amplifier module chain achieves a receiver noise temperature of 87 K at 228 GHz and less than a 100 K noise temperature from 217 to 236 GHz. The LNA modules have 21-31 dB gain and the power dissipation is 12.4-15.8 mW. To the best of authors' knowledge, these are the lowest LNA noise temperatures at these frequencies reported to date.

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Section: Cryogenic Measurements and Noise Modellingmentioning

confidence: 99%

A WR4 Amplifier Module Chain With an 87 K Noise Temperature at 228 GHz

Varonen

Samoska

Fung

et al. 2015

IEEE Microw. Wireless Compon. Lett.

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“…Following [24], [28], and [29], the noise factor ( ) and associated gain ( ) of the transistor can be expressed as…”

Section: A Iq Receivermentioning

confidence: 99%

A Fundamental Frequency 120-GHz SiGe BiCMOS Distance Sensor With Integrated Antenna

Sarkas

Hasch

Balteanu

et al. 2012

IEEE Trans. Microwave Theory Techn.

107

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This paper describes the first fundamental frequency single-chip transceiver operating at -band. The low-IF monostatic transceiver integrates on a single chip two 120-GHz voltage-controlled oscillators (VCOs), a 120-GHz divide-by-64 chain, two in-phase/quadrature (IQ) receivers with phase-calibration circuitry, a variable gain transmit amplifier, an antenna directional coupler, a patch antenna, bias circuitry, a transmit power detector, and a temperature sensor. A quartz antenna resonator with 6-dBi gain and simulated 50% efficiency is placed directly above the on-chip patch to transmit and receive the 120-GHz signals. The circuit with the above-integrated-circuit antenna occupies an area of 2.2 mm 2.6 mm, consumes 900 mW from 1.2-and 1.8-V supplies, and was wire-bonded in an open-lid 7 mm 7 mm quad-flat no-leads package. Some transceiver performance parameters were characterized on the packaged chip, mounted on an evaluation board, while others, such as receiver noise figure and VCO phase noise at the 120-GHz output were measured on circuit breakouts. The AMOS-varactor VCOs have a typical phase noise of 100 dBc/Hz at 1-MHz offset and a tuning range of 115.2-123.9 GHz. The receiver gain and the transmitter output power are each adjustable over a range of 15 dB with a maximum transmitter output power of 3.6 dBm. The receiver IQ phase difference, measured at the IF outputs of the packaged transceiver, is adjustable from 70°to 110°, while the amplitude imbalance remains less than 1 dB. The receiver breakout gain and double-sideband noise figure are 10.5-13 and 10.5-11.5 dB, respectively, with an input compression point of 20.5 dBm. Several experiments were conducted through the air over distances of up to 2.1 m with a focusing lens placed above the packaged chip.Index Terms--band, distance sensor, Doppler radar, integrated antenna, in-phase/quadrature (IQ) receiver, 120-GHz transceiver, phase calibration circuit, radar sensor, SiGe BiCMOS.

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“…TCAS,MIN can be computed using the relations for minimum noise measure in terms of the measured e uivalent circuit parameters as a function of DC bias, the DC currents which determine shot noise magnitudes, and physical temperature which determines the thermal noise [ ], [13]- [16]. Fig.…”

Section: B Off-bias S-parameter Measurementsmentioning

confidence: 99%