Experimental cryogenic modeling and noise of SiGe HBTs

Bardin, Joseph C.; Weinreb, S.

doi:10.1109/mwsym.2008.4633202

Cited by 29 publications

(12 citation statements)

References 13 publications

(13 reference statements)

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“…At lower frequencies the 1/f noise of GP-LNA is higher which increases its T min . The average T min for both LNAs is 17.6 K. Cascaded minimum noise temperatures, T min,cas = T min G A /(G A − 1) [10], where G A is the available gain, are convenient for comparison of amplifiers with different T min 's and different available gains. Fig.…”

Section: Measurement Results and Discussionmentioning

confidence: 99%

Comparison of LNAs fabricated in 65-nm CMOS GP and LP processes for the Square Kilometre Array

Belostotski

2012

IEICE Electron. Express

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Abstract:In this work two 0.7-1.4 GHz room-temperature 65 nm CMOS low noise amplifiers (LNAs), designed for the Square Kilometre Array (SKA) radio telescope receiver, are compared. One LNA was fabricated with low-power (LP) transistors whereas the other, otherwise identical LNA, was fabricated with general-purpose (GP) transistors. As shown there are electrical and noise performance differences between the two circuits. The GP-LNA achieves better noise temperatures (∼22 K) at the upper band edge whereas the LP-LNA has a higher gain. The GP-LNA is a marginally better option for the SKA due to better S 11 and lower noise temperatures at the upper frequency range.

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Section: Measurement Results and Discussionmentioning

confidence: 99%

Comparison of LNAs fabricated in 65-nm CMOS GP and LP processes for the Square Kilometre Array

Belostotski

2012

IEICE Electron. Express

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“…The presence of germanium atoms in the base makes its band-gap smaller than that of the emitter, allows higher doping levels, and results in a very small base spreading resistance, hence low series noise, and wide bandwidth even at low bias currents (below 1 mA). These characteristics also make most HBTs able to work effectively at cryogenic temperatures, although in some cases with higher low frequency noise [6][7][8][9]. Several cryogenic amplifiers are reported in literature that take full advantage of SiGe HBTs [10][11][12][13][14][15][16][17].…”

Section: Description Of the Circuitmentioning

confidence: 99%

A low noise and low power cryogenic amplifier for single photoelectron sensitivity with large arrays of SiPMs

et al. 2020

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A: This paper presents a low noise amplifier for large arrays of silicon photomultipliers (SiPMs) operated in cryogenic environments, especially liquid argon (87 K) and liquid nitrogen (77 K). The goal is for one amplifier to read out a total photosensitive surface of tens of cm 2 while retaining the capability to resolve single photoelectron signals. Due to the large capacitance of SiPMs, typically a few nF per cm 2 , the main contributor to noise is the series (voltage) component. A silicon-germanium heterojunction bipolar transistor (HBT) was selected as the input device of the cryogenic amplifier, followed by a fully differential operational amplifier, operated in an unconventional feedback configuration. The input referred voltage noise of the circuit at 77 K is just below 0.4 nV/ √ Hz white (above 100 kHz) and 1 nV/ √ Hz at 10 kHz. The value of the base spreading resistance of the HBT at 77 K was determined from noise measurements at different bias currents. Power consumption of the full circuit is about 2.5 mW. The design gives the flexibility to optimally compensate the feedback loop for different values of the input capacitance, and obtain a gain-bandwidth product in the GHz range. The signal-to-noise ratio obtained in reading out SiPMs is discussed for the case of a 300 kHz low pass filter and compared with the upper limit that would derive from applying optimum filtering algorithms. K: Front-end electronics for detector readout, analogue electronic circuits, Photon detectors for UV, visible and IR photons (solid-state), Noble liquid detectors (scintillation, ionization, double-phase).

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“…Wideband noise and impedance matching is also comparatively difficult with GaAs and InP processes with respect to SiGe. CMOS and HBT processes are much more power effective but minimum noise figure is significantly higher than HEMTs (Bardin & Weinreb 2008). Figure 1(a) shows the normalized transconductance of six different HEMT processes against power consumption.…”

Section: Semiconductor Technologies Studied For Lna Developmentmentioning

confidence: 99%

Reviw of Square Kilometre Array LNA Technologies and Topologies

Bhaumik¹,

George²

2011

Proceedings of Wide Field Astronomy &Amp; Technology for the Square Kilometre Array — PoS(SKADS 2009)

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The paper concentrates on summarizing significant worldwide developments in the Low Noise Amplifier domain for the Square Kilometre Array telescope. Several technologies, design topologies and noise measurement techniques of LNAs for SKA have been proposed and analysed since the commencement of the project in 2000. Transistor technologies including GaAs mHEMT, GaAs pHEMT, SiGe HBT, CMOS, InP pHEMT have been extensively studied and characterised at multiple institutes around the world. The proposed site of SKA is either Western Australia or South Africa. Both sites experience a very significant physical temperature variation even over a 24 hour period. Hence temperature dependant studies on the DC, small signal and noise characteristics of different transistors have been carried out. Cryogenic characterisation down to 15K physical temperature of certain types of transistor technologies has also been performed. Both hybrid and MMIC LNAs based on the above technologies have been designed and measured. Depending on the antenna topology and impedance, both single ended and differential LNAs with various input impedances have been explored. Performance of LNA integrated with the antenna has been simulated and the effect of the variation of antenna impedance on the overall performance of the before mentioned components have been studied. Design, development and comprehensive analysis of measured data of both variations of LNA and their pros and cons have been portrayed in this paper. Due to system architecture requirements, differential input-single ended output LNA configuration has been designed and measured. In this paper their advantages, disadvantages and their sources will be identified. Some interesting theories and techniques of differential noise measurements have been proposed during SKA project and will also be explained as part of this paper.

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Experimental cryogenic modeling and noise of SiGe HBTs

Cited by 29 publications

References 13 publications

Comparison of LNAs fabricated in 65-nm CMOS GP and LP processes for the Square Kilometre Array

Comparison of LNAs fabricated in 65-nm CMOS GP and LP processes for the Square Kilometre Array

A low noise and low power cryogenic amplifier for single photoelectron sensitivity with large arrays of SiPMs

Reviw of Square Kilometre Array LNA Technologies and Topologies

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