Optimum composition of a Bi2Te3 − x Se x alloy for the n-type leg of a thermoelectric generator

Prokofieva, L. V.; Pshenay-Severin, D. A.; Константинов, П. П.; Shabaldin, A. A.

doi:10.1134/s1063782609080016

Cited by 28 publications

(20 citation statements)

References 3 publications

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“…They focused on the effect of Cu on carrier concentration and electronic properties. [11][12][13][14][15] Despite the considerable research on this material, the effects of Cu intercalation on the thermoelectric properties of Bi 2 Te 3 have not yet been systematically studied.…”

Section: Introductionmentioning

confidence: 99%

Formation of Cu nanoparticles in layered Bi2Te3 and their effect on ZT enhancement

et al. 2011

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Section: Introductionmentioning

confidence: 99%

Formation of Cu nanoparticles in layered Bi2Te3 and their effect on ZT enhancement

et al. 2011

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“…The term ␣ 2 is called the power factor ͑PF͒. 11 Recent results show that transparent conducting oxides ͑TCOs͒ are a promising alternative to these traditional hightemperature thermoelectric materials. ͑1͒, it is apparent that thermoelectric performance generally increases with temperature.…”

Section: Introductionmentioning

confidence: 99%

Electronic and thermoelectric analysis of phases in the In2O3(ZnO)k system

Hopper

Zhu

Song

et al. 2011

Journal of Applied Physics

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The high-temperature electrical conductivity and thermopower of several compounds in the In2O3(ZnO)k system (k=3, 5, 7, and 9) were measured, and the band structures of the k=1, 2, and 3 structures were predicted based on first-principles calculations. These phases exhibit highly dispersed conduction bands consistent with transparent conducting oxide behavior. Jonker plots (Seebeck coefficient versus natural logarithm of conductivity) were used to obtain the product of the density of states and mobility for these phases, which were related to the maximum achievable power factor (thermopower squared times conductivity) for each phase by Ioffe analysis (maximum power factor versus Jonker plot intercept). With the exception of the k=9 phase, all other phases were found to have maximum predicted power factors comparable to other thermoelectric oxides if suitably doped.

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“…23,24 Although these measured values have some discrepancies with the band gap of previous reported values, the results that the lower-tellurium-bearing Bi 2 (Se 0.4 Te 0.6 ) 3 compound shows a larger E g value of 0.181 eV compared with the ZM sample ($0.169 eV) with composition Bi 2 (Se 0.07 Te 0.93 ) 3 explicitly gives a reasonable explanation for the shift of ZT max to high temperature for the Bi 2 (Se 0.4 Te 0.6 ) 3 compound, which is consistent with previous reports. 3,18 Furthermore, the effective band gaps (E g ) also can be estimated according to the equation: E g = 2ea max T max , where a max is the peak and T max is the temperature at which the peak Seebeck coefficient occurs. 25,26 Therefore, the estimated band gaps of the MS + SPS 40 m/s Bi 2 (Se 0.4 Te 0.6 ) 3 compound and the ZM sample are 0.174 eV and 0.165 eV, respectively, which is in accordance with the optical measurements.…”

Section: Thermoelectric Transport Properties Of Bulk Materialsmentioning

confidence: 99%

“…Previous research has demonstrated that increasing the selenium content in Bi 2 (Se x Te 1Àx ) 3 compounds decreases the carrier mobility and so deteriorates the thermoelectric performance. 18,19 However, there is no detailed study on the thermoelectric properties of materials with intermediate selenium content. In this work, by adopting a technique combining melt spinning and spark plasma sintering (MS + SPS), we investigated the effects of the cooling rate of melt spinning on the thermoelectric properties of lowtellurium-bearing Bi 2 (Se 0.4 Te 0.6 ) 3 compounds.…”

Section: Introductionmentioning

confidence: 99%

Effects of Cooling Rate on Thermoelectric Properties of n-Type Bi2(Se0.4Te0.6)3 Compounds

Wang

Xie

et al. 2011

Journal of Elec Materi

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A series of Bi 2 (Se 0.4 Te 0.6 ) 3 compounds were synthesized by a rapid route of melt spinning (MS) combined with a subsequent spark plasma sintering (SPS) process. Measurements of the Seebeck coefficient, electrical conductivity, and thermal conductivity were performed over the temperature range from 300 K to 520 K. The measurement results showed that the cooling rate of melt spinning had a significant impact on the transport properties of electrons and phonons, effectively enhancing the thermoelectric properties of the compounds. The maximum ZT value reached 0.93 at 460 K for the sample prepared with the highest cooling rate, and infrared spectrum measurement results showed that the compound with lower tellurium content, Bi 2 (Se 0.4 Te 0.6 ) 3 , possesses a larger optical forbidden gap (E g ) compared with the traditional n-type zone-melted material with formula Bi 2 (Se 0.07 Te 0.93 ) 3 . Our work provides a new approach to develop low-tellurium-bearing Bi 2 Te 3 -based compounds with good thermoelectric performance.

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Optimum composition of a Bi2Te3 − x Se x alloy for the n-type leg of a thermoelectric generator

Cited by 28 publications

References 3 publications

Formation of Cu nanoparticles in layered Bi2Te3 and their effect on ZT enhancement

Formation of Cu nanoparticles in layered Bi2Te3 and their effect on ZT enhancement

Electronic and thermoelectric analysis of phases in the In2O3(ZnO)k system

Effects of Cooling Rate on Thermoelectric Properties of n-Type Bi2(Se0.4Te0.6)3 Compounds

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