Formation of Cu nanoparticles in layered Bi2Te3 and their effect on ZT enhancement

Han, Mi‐Kyung; Ahn, Kyunghan; Kim, Hee Jin; Rhyee, Jong‐Soo; Kim, Sungjin

doi:10.1039/c1jm10163c

Cited by 95 publications

(80 citation statements)

References 21 publications

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“…Element doping is a more effective approach to enhance the thermoelectric properties of Bi 2 Te 3 -based alloys [8,9,10,11,12]. Among various dopants, Cu or Cu-halide acts as an excellent additive for improvement of thermoelectric performance of n -type Bi 2 Te 3 [13,14,15,16]. Cu atoms can be either an acceptor or a donor depending on their location in the compound.…”

Section: Introductionmentioning

confidence: 99%

“…Cu is also known to improve the reproducibility of thermoelectric materials, due to the formation of Cu–Te bond in the van der Waals gaps, which suppress the escape of Te atoms [17]. The Cu-intercalated Bi 2 Te 3 bulk shows a significantly enhanced ZT of ~1.12 at 300 K [13], which is the highest ZT value reported for n -type Bi 2 Te 3 binary material. Cu addition can also prevent the oxidation of the Bi 2 Te 3 [17].…”

Section: Introductionmentioning

confidence: 99%

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Thermoelectric Properties of Bi2Te3: CuI and the Effect of Its Doping with Pb Atoms

Han

Lee

et al. 2017

Materials

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In order to understand the effect of Pb-CuI co-doping on the thermoelectric performance of Bi2Te3, n-type Bi2Te3 co-doped with x at % CuI and 1/2x at % Pb (x = 0, 0.01, 0.03, 0.05, 0.07, and 0.10) were prepared via high temperature solid state reaction and consolidated using spark plasma sintering. Electron and thermal transport properties, i.e., electrical conductivity, carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity, of CuI-Pb co-doped Bi2Te3 were measured in the temperature range from 300 K to 523 K, and compared to corresponding x% of CuI-doped Bi2Te3 and undoped Bi2Te3. The addition of a small amount of Pb significantly decreased the carrier concentration, which could be attributed to the holes from Pb atoms, thus the CuI-Pb co-doped samples show a lower electrical conductivity and a higher Seebeck coefficient when compared to CuI-doped samples with similar x values. The incorporation of Pb into CuI-doped Bi2Te3 rarely changed the power factor because of the trade-off relationship between the electrical conductivity and the Seebeck coefficient. The total thermal conductivity(κtot) of co-doped samples (κtot ~ 1.4 W/m∙K at 300 K) is slightly lower than that of 1% CuI-doped Bi2Te3 (κtot ~ 1.5 W/m∙K at 300 K) and undoped Bi2Te3 (κtot ~ 1.6 W/m∙K at 300 K) due to the alloy scattering. The 1% CuI-Pb co-doped Bi2Te3 sample shows the highest ZT value of 0.96 at 370 K. All data on electrical and thermal transport properties suggest that the thermoelectric properties of Bi2Te3 and its operating temperature can be controlled by co-doping.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of Bi2Te3: CuI and the Effect of Its Doping with Pb Atoms

Han

Lee

et al. 2017

Materials

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“…Moreover, by fine tuning the relaxation time ratio between the bulk states and the TNSS within a physically realistic range, the ZT value can be optimized to ~2.0 at the critical thickness of d = 3 QLs. We also reveal that this approach can bridge the long-standing ZT asymmetry of p-and n-type Bi 2 Te 3 systems 24,25,26 , which may prove to be instrumental in future design of thermoelectric devices.…”

Section: Introductionmentioning

confidence: 99%

Maximizing the thermoelectric performance of topological insulator Bi₂Te₃films in the few-quintuple layer regime

et al. 2016

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Using first-principles calculations and Boltzmann theory, we explore the feasibility to maximize the thermoelectric figure of merit (ZT) of topological insulator Bi 2 Te 3 films in the few-quintuple layer regime. We discover that the delicate competitions between the surface and bulk contributions, coupled with the overall quantum size effects, lead to a novel and generic non-monotonous dependence of ZT on the film thickness. In particular, when the system crosses into the topologically non-trivial regime upon increasing the film thickness, the much longer surface relaxation time associated with the robust nature of the topological surface states results in a maximal ZT value, which can be further optimized to ~2.0 under physically realistic conditions. We also reveal the appealing potential of bridging the long-standing ZT asymmetry of p-and n-type Bi 2 Te 3 systems.

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“…For example, Cu--based inclusions in p--Bi 2 Te 3 switch the conductivity type from p to n as the mole concentration of Cu goes from 0% to 5%. 43 However, there are still a few interesting observations about the Seebeck coefficient enhancement without losing the electrical conductivity. …”

Section: Solid--state Syntheses Of Homogeneous Hetero--structuresmentioning

confidence: 99%

Heterostructured Approaches to Efficient Thermoelectric Materials

Zhang

Stucky

2013

Chem. Mater.

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ABSTRACT:A key challenge for the materials chemist is the development of controllable and straightforward synthetic methodologies that will integrate multiple phases/compositions with scalar designed physical properties. The intent of this review is to give a brief summary of some of the current bulk--scaled approaches that might help guide researchers in the design of optimal hetero--structures in large quantity for the further improvement of thermoelectric conversion efficiency. Examples of two--phase combinations on different length scales will be discussed with a focus on the hot carrier filtering effect that results from the selective scattering of carriers with different energies. Based on this strategy, hetero--structures fabricated by both the bottom--up solution approaches at low temperature and top--down solid--state deposition routes that show promise in improving the thermoelectric figure of merit are highlighted, which may help guide researchers in the design of novel hetero--structures for further improvement.

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Formation of Cu nanoparticles in layered Bi2Te3 and their effect on ZT enhancement

Cited by 95 publications

References 21 publications

Thermoelectric Properties of Bi2Te3: CuI and the Effect of Its Doping with Pb Atoms

Thermoelectric Properties of Bi2Te3: CuI and the Effect of Its Doping with Pb Atoms

Maximizing the thermoelectric performance of topological insulator Bi₂Te₃films in the few-quintuple layer regime

Heterostructured Approaches to Efficient Thermoelectric Materials

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Formation of Cu nanoparticles in layered Bi2Te3 and their effect on ZT enhancement

Cited by 95 publications

References 21 publications

Thermoelectric Properties of Bi2Te3: CuI and the Effect of Its Doping with Pb Atoms

Thermoelectric Properties of Bi2Te3: CuI and the Effect of Its Doping with Pb Atoms

Maximizing the thermoelectric performance of topological insulator Bi2Te3films in the few-quintuple layer regime

Heterostructured Approaches to Efficient Thermoelectric Materials

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Product

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Maximizing the thermoelectric performance of topological insulator Bi₂Te₃films in the few-quintuple layer regime