Electronic and thermoelectric analysis of phases in the In2O3(ZnO)k system

Abstract

The high-temperature electrical conductivity and thermopower of several compounds in the In2O3(ZnO)k system (k=3, 5, 7, and 9) were measured, and the band structures of the k=1, 2, and 3 structures were predicted based on first-principles calculations. These phases exhibit highly dispersed conduction bands consistent with transparent conducting oxide behavior. Jonker plots (Seebeck coefficient versus natural logarithm of conductivity) were used to obtain the product of the density of states and mobility for these phases, which were related to the maximum achievable power factor (thermopower squared times conductivity) for each phase by Ioffe analysis (maximum power factor versus Jonker plot intercept). With the exception of the k=9 phase, all other phases were found to have maximum predicted power factors comparable to other thermoelectric oxides if suitably doped.

SPS‐assisted synthesis of InGaO3(ZnO)m ceramics, and influence of m on the band gap and the thermal conductivity

“…[12][13][14][15]), similarly to their sister homologous compounds In 2 O 3 (ZnO) m . [16][17][18][19] However, the study of transport properties of polycrystalline pellets remains scarce, and there has been very few systematic studies of the influence of the value of m on the properties of InGaO 3 (ZnO) m outside crystallographic properties, especially for large values.…”

Synergistic effects of zirconium- and aluminum co-doping on the thermoelectric performance of zinc oxide

“…Doping with elements capable to possess the oxidation states higher than 2+ is a known straightforward approach to tune TE performance of ZnO. Representative examples include aluminum [10][11][12][13], indium [14][15][16], iron [17], nickel [18], bismuth [15,19], etc. From those, aluminum can be considered as a most used and common dopant.…”

Weak localization and percolation effects in annealed In2O3-ZnO thin films

“…13,14 During deposition, the substrate was kept at the room temperature. To obtain films with different morphologies, we annealed the amorphous films in air for 2 min on a hot plate preheated to annealing temperatures of T a =200, 210, 223 and 228…”