2004
DOI: 10.1109/tmag.2004.826628
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Optimizing Write Current and Power Dissipation in MRAMs by Using an Astroid Curve

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Cited by 3 publications
(12 citation statements)
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“…The write current is large in comparison with, for example, ferroelectric RAM (FeRAM) and with read current of MRAM itself. 3) The write current is also a critical limiting factor in future scalability of MRAM memory cells, because the magnetic field to switch the magnetization increases as the width of MTJ device decreases. 4) Another problem is cell selectivity.…”
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confidence: 99%
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“…The write current is large in comparison with, for example, ferroelectric RAM (FeRAM) and with read current of MRAM itself. 3) The write current is also a critical limiting factor in future scalability of MRAM memory cells, because the magnetic field to switch the magnetization increases as the width of MTJ device decreases. 4) Another problem is cell selectivity.…”
mentioning
confidence: 99%
“…On the other hand, it is reported that MTJ devices with newly devised shapes exhibit thinner star-shaped curves of the switching fields than conventional MTJ devices, and thus better cell selectivity and smaller switching fields suitable for denser memories to sub-100 nm MTJ widths. 8,9) Theoretical expressions and methods for optimizing MRAM write current and write power consumption were developed in a previous work 3) for conventional MTJ cells whose switching characteristics can be described by the asteroid curve. If the expressions can be extended to include a parameter related to the thinner switching characteristics curves of MTJs with the newly devised shapes as above, the expressions should be able to predict to what extent the writing current can be lowered with the new MTJ shape design approach.…”
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