Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning

Abstract

Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the interaction of charge carriers originating from the 2D semiconductors with defects in the surrounding insulating materials. The resulting dynamically trapped charges are particularly relevant in field effect transistors (FETs) and can lead to a large hysteresis, which endangers

Zero‐Bias Power‐Detector Circuits based on MoS2 Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

“…For a defined drain current of 1 µA, we obtain VTH, M = -7.5 V and VTH, S =-4.4 V. A small clockwise hysteresis is observed for the M devices, which is a common phenomenon in MOSFETs with MoS2 channels. It is usually an indicator of the presence of border traps which are negatively charged during the sweep in the gate oxide of the transistors [41,50] . One can observe some substantial differences in the curves other than hysteresis for the M-material, for example a clear degradation of the inverse Subthreshold Slope (or Subthreshold Swing, SS) and a reduction of the ON/OFF ratio, compared to the S-material.…”

“…It is usually an indicator of the presence of border traps which are negatively charged during the sweep in the gate oxide of the transistors. [41,50] One can observe some substantial differences in the curves other than hysteresis for the M-material, e.g., a clear degradation of the inverse subthreshold slope (or subthreshold swing, SS) and a reduction of the ON/OFF ratio, compared to the S-material. This may be attributed to the presence of a higher amount of defects, such as sulfur vacancies, in the multilayer material.…”