Optimizing the growth of 1.3-μm InAs/InGaAs dots-in-a-well structure: Achievement of high-performance laser

Liu, H.Y.; Sellers, Ian R.; Gutiérrez, M.; Groom, K. M.; Beanland, Richard; Soong, W. M.; Hopkinson, M.; David, J.P.R.; Badcock, T. J.; Mowbray, D. J.; Skolnick, M. S.

doi:10.1016/j.msec.2005.06.006

Cited by 13 publications

(8 citation statements)

References 11 publications

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“…Studies of the dependence of optical properties on the InGaAs SRL have been carried out previously, e.g., influence of In composition in InGaAs SRL on the structural and optical properties of InAs QDs has been studied by H.Y. Liu et al [ 8 ]. Muhammad Usman et al [ 9 ] also made a detailed study of the strain-reducing effect caused by the InGaAs SRL and identified the strain reduction as the dominating factor for the redshift of InAs QD photoluminescence (PL) emission.…”

Section: Introductionmentioning

confidence: 99%

Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure

Wang

Chen

et al. 2016

Nanoscale Res Lett

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InAs/InGaAs dot-in-well (DWELL) structures have been investigated with the systematically varied InGaAs thickness. Both the strained buffer layer (SBL) below the dot layer and the strain-reducing layer (SRL) above the dot layer were found to be responsible for the redshift in photoluminescence (PL) emission of the InAs/InGaAs DWELL structure. A linear followed by a saturation behavior of the emission redshift was observed as a function of the SBL and SRL thickness, respectively. The PL intensity is greatly enhanced by applying both of the SRL and SBL. Finite element analysis simulation and transmission electron microscopy (TEM) measurement were carried out to analyze the strain distribution in the InAs QD and the InGaAs SBL. The results clearly indicate the strain reduction in the QD induced by the SBL, which are likely the main cause for the emission redshift.

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Section: Introductionmentioning

confidence: 99%

Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure

Wang

Chen

et al. 2016

Nanoscale Res Lett

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“…At least, this result suggests that amount of contributing QDs in the stacking structure has not become twice and/ or huge increase in non radiative centres like defects. The reason for inadequate stacking effect may be defects due to stacking that generated during the stacking growth from 5 to 10 layers [4,5]. This result indicates that further optimization of stacking condition for the case of high QD density of 6x10 10 cm -2 .…”

Section: Contributed Articlementioning

confidence: 97%

Process‐free estimation of threshold current density of InAs quantum dot laser

Kumagai

Ishida

Nakata

et al. 2008

Phys. Status Solidi (c)

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We have associated threshold current density of 1.3 μm InAs quantum dot (QD) laser diodes with the photoluminescence (PL) peak intensity of as‐grown wafers. These InAs QD laser wafers with stacking structure of 5 and 10 QD layers were grown by molecular beam epitaxy. PL measurements have carried out by high power excitation at room temperature. The PL peak intensity from ground state of InAs QDs has been inversely proportional to the threshold current density. Additionally, enhancement of PL peak intensity by increase in stacked QD layers has been corresponded to increase in maximum modal gain of QD laser. These results indicate that PL characterization by high power excitation is useful to estimate quality of as‐grown wafers without fabrication of QD laser diode. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…2(b)]. Such high density QDs obtained on In 0.1 Ga 0.9 As is caused by the high strain energy accumulated in the bottom alloy layer [5]- [7]. Figure 3 shows the excitation power dependence of the PL peak intensity of these QD samples.…”

Section: Photoluminescence Propertiesmentioning

confidence: 99%

Broadband light sources using InAs quantum dots with InGaAs strain‐reducing layers

Tsuda

Inoue

Wada

2010

Phys. Status Solidi (c)

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We fabricated broadband superluminescent diodes (SLDs) for optical coherence tomography (OCT). We used three kinds of quantum dot (QD) layers with different emission peak wavelengths in the active region of SLD. The emission wavelength was controlled by reducing the strain in QDs; by using the In0.1Ga0.9 As strain‐reducing layer, the peak wavelength shifted toward the longer‐wavelength side, and the photoluminescence peak intensity becomes strong in contrast to QDs on GaAs. By stacking these strain‐controlled QD layers, the SLD device shows a broad electroluminescence spectrum with the center wavelength of 1130 nm and the spectral linewidth of approximately 240 nm at the injection of 1A caused by the increased emission intensity from the excited states. This corresponds to an resolution of 2.3 μm in OCT. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Optimizing the growth of 1.3-μm InAs/InGaAs dots-in-a-well structure: Achievement of high-performance laser

Cited by 13 publications

References 11 publications

Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure

Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure

Process‐free estimation of threshold current density of InAs quantum dot laser

Broadband light sources using InAs quantum dots with InGaAs strain‐reducing layers

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