Broadband light sources using InAs quantum dots with InGaAs strain‐reducing layers

Tsuda, Momoko; Inoue, T.; Wada, Osamu

doi:10.1002/pssc.201000517

Cited by 15 publications

(11 citation statements)

References 5 publications

(5 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since the first proposal by Sun et al, 8) the QDbased broadband light source, in particular, the electrically driven superluminescent diode (SLD), has been intensively studied. [8][9][10][11][12][13][14][15][16][17][18][19] The SLD emits light with a lower coherence than that of a laser diode and higher output power than that of a light-emitting diode.…”

Section: Introductionmentioning

confidence: 99%

Imaging of spectral-domain optical coherence tomography using a superluminescent diode based on InAs quantum dots emitting broadband spectrum with Gaussian-like shape

Shibata

Ozaki

Yasuda

et al. 2015

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We developed a low-coherence light source based on self-assembled InAs quantum dots (QDs) with controlled emission wavelengths and applied it to optical coherence tomography (OCT) imaging. A current-driven superluminescent diode (SLD) light source including four layers of QDs exhibits a broadband (80-nm-bandwidth) emission centered at approximately 1.2 µm with a Gaussian-like spectral shape at room temperature. Spectral-domain OCT (SD-OCT) using the QD-SLD as a light source was developed and imaging with the SD-OCT was demonstrated. The axial resolution was estimated to be approximately 8 µm in air and no apparent side lobes appeared beside the point spread function, indicating the effectiveness of the QD-SLD for high-resolution, noise-reduced OCT imaging.

show abstract

Section: Introductionmentioning

confidence: 99%

Imaging of spectral-domain optical coherence tomography using a superluminescent diode based on InAs quantum dots emitting broadband spectrum with Gaussian-like shape

Shibata

Ozaki

Yasuda

et al. 2015

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…In Table 1, the power, spectral bandwidth and average power spectral density of the SLD detailed in this work is compared to a selection of state-of-the-art CW operated devices emitting in the 1.1 -1.3 μm spectral band that have been previously reported. The devices included in Table 1 were chosen from a vast number of reports [1,9,13,16, and mark some of the best reported bandwidth, average power or power spectral density for CW devices in the 1.1 -1.3 μm waveband. The maximum power that was observed from our device in the superluminescent regime was 137.5 mW, the highest for a CW-biased device in the 1.1 -1.3 µm spectral band, as highlighted in Table 1.…”

Section: Sld Performancementioning

confidence: 99%

“…In the spectral region between 1.1 -1.3 µm, quantum-dot (QD) materials have shown great promise, particularly by using chirped QD layers, whereby the average size of the QDs can be engineered in each layer in order to target a particular emission wavelength [15]. This approach has led to the broadest optical spectrum emission, of around 240 nm, in continuously driven QD-based SLDs in this spectral region (1.1 -1.3 μm) [16] as well as supported the development of broadly-tunable QD lasers [17,18].…”

Section: Introductionmentioning

confidence: 99%

High-power quantum-dot superluminescent tapered diode under CW operation

Forrest¹,

Krakowski²,

Bardella³

et al. 2019

Opt. Express

View full text Add to dashboard Cite

A high-power quantum-dot superluminescent diode is demonstrated under continuous-wave operation, with an output power of 137.5 mW and a corresponding spectral bandwidth of 21 nm. This represents not only the highest output power, but also a record-high power spectral density of 6.5 mW/nm for a CW-operated superluminescent diode in the 1.1-1.3 μm spectral region, marking more than a 6-fold increase with respect to the state of the art. The two-section contact layout of the reported device introduces additional degrees of freedom, which enable a wide tunability of the bandwidth and power depending on the desired application. A maximum bandwidth of 79 nm was recorded, with an output power of 1.4 mW. The high-power continuous-wave operation of this device would be particularly relevant for continuous, high-speed, high-sensitivity spectroscopy, imaging and sensing applications, as well as in optical communications. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

show abstract

“…The SLD device is usually based on a conventional light-emitting semiconductor material, such as a quantum well, and it is not easy to broaden the bandwidth beyond 100 nm. To overcome this difficulty, an SLD based on an alternative material, a self-assembled quantum dot (QD), was proposed [6], and has been studied intensively [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21].…”

Section: Broadband Light Source Based On Self-assembled Inas/gaas Quamentioning

confidence: 99%

Integration of Emission-Wavelength-Controlled InAs Quantum Dots for Ultra-Broadband Near-Infrared Light Source

Ozaki

Takeuchi

Hino

et al. 2014

Nanomaterials and Nanotechnology

View full text Add to dashboard Cite

Near-infrared (NIR) light sources are widely utilized in biological and medical imaging systems owing to their long penetration depth in living tissues. In a recently developed biomedical non-invasive cross-sectional imaging system, called optical coherence tomography (OCT), a broadband spectrum is also required, because OCT is based on low coherence interferometry. To meet these operational requirements, we have developed a NIR broadband light source by integrating self-assembled InAs quantum dots (QDs) grown on a GaAs substrate (InAs/GaAs QDs) with different emission wavelengths. In this review, we introduce the developed light sources and QD growth techniques that are used to control the emission wavelength for broadband emission spectra with center wavelengths of 1.05 and 1.3 μm. Although the strain-induced Stranski-Krastanov (S-K) mode-grown InAs/GaAs QDs normally emit light at a wavelength of around 1.2 μm, the central emission wavelength can be controlled to be between 0.9-1.4 μm by the use of an In-flush technique, the insertion of a strain-reducing layer (SRL) and bi-layer QD growth techniques. These techniques are useful for applying InAs/GaAs QDs as NIR broadband light sources and are especially suitable for our proposed spectral-shape-controllable broadband NIR light source. The potential of this light source for improving the performance of OCT systems is discussed.

show abstract

Broadband light sources using InAs quantum dots with InGaAs strain‐reducing layers

Cited by 15 publications

References 5 publications

Imaging of spectral-domain optical coherence tomography using a superluminescent diode based on InAs quantum dots emitting broadband spectrum with Gaussian-like shape

Imaging of spectral-domain optical coherence tomography using a superluminescent diode based on InAs quantum dots emitting broadband spectrum with Gaussian-like shape

High-power quantum-dot superluminescent tapered diode under CW operation

Integration of Emission-Wavelength-Controlled InAs Quantum Dots for Ultra-Broadband Near-Infrared Light Source

Contact Info

Product

Resources

About