Optimizing high efficient plasma immersion ion implantation hydrogenation for poly-Si thin film transistors

Qin, Shu; Zhou, Yuanzhong; Nakatsugawa, T.; Chan, Chung

doi:10.1016/s0168-583x(97)00078-5

Cited by 10 publications

(2 citation statements)

References 14 publications

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“…The activated hydrogen species were produced using an ICP generator to increase the Si-H bonds in plasma. In addition, ICP has advantages compared with other conventional plasma sources, such as low contamination, high ion density, low working pressure, and uniform distribution of radical ions [5]. The hydrogen supplement without an ICP generator, i.e.…”

Section: Introductionmentioning

confidence: 99%

Effects of hydrogen on poly- and nano-crystallization of a-Si:H prepared by RF magnetron sputtering

Seo

Jeong

Myoung

2006

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Effects of hydrogen on poly- and nano-crystallization of a-Si:H prepared by RF magnetron sputtering

Seo

Jeong

Myoung

2006

Journal of Crystal Growth

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“…The AES results show that the concentration of O in the overlying layer is twice that of Si thereby confirming that stoichiometric SiO 2 has been grown. [14][15][16] In summary, high quality gate oxide is produced by low temperature (Ͻ100°C) floating rf plasma oxidization on poly-SiGe wafers. %͒ possibly due to the high volatility of GeO x and Ge segregation out of the stable SiO 2 layer.…”

mentioning

confidence: 99%

Floating low-temperature radio-frequency plasma oxidation of polycrystalline silicon-germanium

Fan

Zhao

Chu

et al. 1998

Applied Physics Letters

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Low temperature oxide formation is an important process in the fabrication of thin-film transistors (TFT) used in active-matrix liquid crystal displays. However, low temperature oxide is prone to have defects at the SiO2/polycrystalline–SiGe interfaces. We have recently developed a novel rf (radio frequency) plasma oxidation method for polycrystalline SiGe (poly-SiGe) materials. The poly-SiGe wafers are oxidized in an oxygen rf plasma with the samples electrically floating. That is, the sample voltage is the same as the sheath potential of the floating wall and is always negative with respect to the bulk of the plasma since electrons have higher mobility than ions. The slightly negative potential on the wafers attracts low energy oxygen ions from the plasma and the resulting damage on the wafers is thus lower than that induced by the more commonly used and energetic electron cyclotron resonance (ECR) source. No deliberate heating is applied during oxidation since the samples are heated spontaneously by the plasma, but the temperature is measured to be below 100 °C throughout the entire process. The oxidation rate is comparable to that of ECR plasma oxidation. Depth profiles are acquired by Auger electron spectroscopy and the interfaces are examined by x-ray photoelectron spectroscopy. The n-channel metal oxide silicon device fabricated on the as-grown gate oxide shows good electrical characteristics. The process is thus compatible with inexpensive large-area, low-temperature fabrication of TFTs on glass substrates.

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Plasma ion implantation to thin polymer foils

Xia

Huang

Yang

et al. 2008

Physica Status Solidi (a)

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Plasma ion implantation and deposition of polymeric materials has gained substantial interest in recent years. This paper will present numerical results on initial potential on top surface and some examples on ion implantation of thin polymer foils. The results demonstrate that the thickness and permittivity of treated samples have a critical influence on initial potential drop across the insulating objects. The smaller thickness and larger permittivity are beneficial for ion implantation. Duplex films of Al2O3/SiO2 have been fabricated using arc plasma ion implantation and deposition. The films may substantially increase atomic‐oxygen resistance of Kapton foils, which have been frequently utilized in satellites in low‐earth‐orbit (LEO) environment. The mass loss of treated samples may decrease by one quarter of magnitude compared to that of control sample. The PET foils have also been implanted using C2H2 plasma ion implantation. The experimental results show that ion implantation may effectively enhance the gas barrier capability. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Optimizing high efficient plasma immersion ion implantation hydrogenation for poly-Si thin film transistors

Cited by 10 publications

References 14 publications

Effects of hydrogen on poly- and nano-crystallization of a-Si:H prepared by RF magnetron sputtering

Effects of hydrogen on poly- and nano-crystallization of a-Si:H prepared by RF magnetron sputtering

Floating low-temperature radio-frequency plasma oxidation of polycrystalline silicon-germanium

Plasma ion implantation to thin polymer foils

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