Optimization of transistor structure for transistor-stabilized field emitter arrays

Matsukawa, Takashi; Koga, K.; Kanemaru, S.; Tanoue, H.; Itoh, J.

doi:10.1109/16.796305

Cited by 10 publications

(6 citation statements)

References 6 publications

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“…The integration of FEA with MOSFET circuits makes it possible to develop an entire display system on a Si substrate, i.e., FEDon-a-chip, in which a FED, driving circuits, and the other circuits ͑such as CPUs, memories, and even solar cells͒ are monolithically integrated. 15 Here, we explain the reason briefly. We call this system an ''intelligent''-FED (i-FED).…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Si field emitter arrays integrated with metal–oxide–semiconductor field-effect transistor driving circuits

Nagao¹,

Tamura²,

Matsukawa³

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Suppression of leakage current in Schottky barrier metal-oxide-semiconductor field-effect transistorsA study on the capacitance-voltage characteristics of metal-Ta 2 O 5 -silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications A memory cell with single-electron and metal-oxide-semiconductor transistor integration Si field emitter arrays ͑FEAs͒ were monolithically integrated with metal-oxide-semiconductor field-effect-transistor ͑MOSFET͒ based driving circuits on a Si chip for the first step toward developing the field-emission-display-on-a-chip ͑FED-on-a-chip͒, which is a candidate for the next-generation FED. We developed a fabrication process of Si FEAs integrated with MOSFET driving circuits. A 4ϫ4 matrix Si FEA, emission-control MOSFET, and simple driving circuits consisting of a shift register were integrated on the same chip. The operation of each element, such as MOSFET-controlled Si FEAs and logic circuits for the driver, was confirmed. The emission current from the Si FEA can be controlled by the built-in MOSFET at a voltage of less than 5 V, which can be driven by the built-in driving circuits. The operation of the 4ϫ4 matrix FEA with driving circuits was demonstrated. This is the first operation of the FEA integrated with MOSFET logic circuits. The detailed design and fabrication processes are described.

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Section: Introductionmentioning

confidence: 99%

Fabrication of Si field emitter arrays integrated with metal–oxide–semiconductor field-effect transistor driving circuits

Nagao¹,

Tamura²,

Matsukawa³

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Variations in the emission current are thus reduced relative to a conventional n-Si emitter tip, as shown in Some of the initial proof-of-concept studies that showed external transistors can achieve active control of the emission current [95,96] indicated some problems with impact ionization. To avoid high-field breakdown effects, a simulation code (TMA MEDICI V.4.0) was used to design the MOSFET-structured emitter [15]. This program solves the Poisson and current-continuity equations to estimate carrier transport in the device structure.…”

Section: Single Gate Mosfet Emittersmentioning

confidence: 99%

“…After etching the source pattern, the conventional emitter structure and the source contact hole are formed by the liftoff process simultaneously. p + ions are implanted into both the tip and the source with a dose of 3×10 15 cm −2 at 60 keV (step d). Then the substrate is annealed at 800…”

Section: Single Gate Mosfet Emittersmentioning

confidence: 99%

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Silicon Field Emitter Arrays

Shaw

Itoh

2001

Vacuum Microelectronics

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“…Combination with active devices (MOSFETs), which are constant-current sources in the saturation region, is effective in stabilizing the emission current [3][4][5]. In the MOSFET-controlled emission, in which the channel current given by the gate voltage is limiting the emission current, the emission current becomes very stable [6].…”

Section: Introductionmentioning

confidence: 99%