No abstract

Germanophosphate (GeO2-P2O5) glasses were studied with neutron diffraction, phosphorus, and oxygen nuclear magnetic resonance, calorimetry, viscosity measurements, and first-principles calculations. These data sets were combined to propose a structural model of GeO2-P2O5 glasses, which includes tetrahedrally coordinated phosphorus, formation of octahedrally coordinated germanium as P2O5 content increases, an absence of trigonally coordinated oxygen, and hence an absence of rutile-like GeO2 domains. The structural model was then used to propose explanations for both the observed composition dependence of the glass transition temperature and the fragility of the GeO2-P2O5 liquids.

An analytical formula of the emittance of a field emitter is given. In contrast to thermal and photoemission, such a formula contains complexity due to the multidimensional nature of the source. A formulation of emittance is given for one- and three-dimensional (3D) field emitters. The 3D formulation makes use of the point charge model of a unit cell emitter coupled with a trajectory analysis to follow electrons to an evaluation plane where emittance is determined. The single tip theory is extended to an array and the resulting theory predicts the emittance of a Spindt-type square array of emitters 0.2cm on a side producing 2000A∕cm2 is 23mmmrad. Theory compares favorably with experimental measurements in the literature from ungated and gated sources. The impacts of several complications are estimated: the effects of a gate for modulating the emitter; the influence of space charge within the unit cell on the beam; and constraints imposed by modulation frequency, emitter dimensions, and rise/fall time requirements for turning a beam on and off, as determined by the array’s RLC characterization.

We demonstrate field emission from an integrated three-terminal device using a suspended planar graphene edge as the source of vacuum electrons. Energy spectra of the emitted electrons confirm the field-emission mechanism. The energy spectra produced by graphene grown by chemical vapor deposition and reduced graphene oxide are compared. The drain-source voltage required to produce a given drain current increases when negative voltages are applied to the gate, confirming field-effect transistor operation. The emission current rises exponentially with inverse voltage over the measured current range from 1 pA to 10 nA. The current-voltage characteristics are consistent with tunneling through barrier potentials calculated numerically from the device geometry.