Optimization of Reactive-Ion Etching (RIE) parameters to maximize the lateral etch rate of silicon using SF6/N2 gas mixture: An alternative to etching Si in MEMS with Au components

Mendes, Munique Kazar; Ghouila-Houri, Cécile; Hammami, S.; Arnoult, T.; Pernod, Philippe; Talbi, Abdelkrim

doi:10.1016/j.matlet.2020.129058

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…hBN was first exfoliated on a clean SiO 2 substrate and then transferred on top of the bottom electrode (Figure a,e) with a stamp made from a polydimethylsiloxane (PDMS) block and a polycarbonate (PC) film. , After top contact patterning (Figure b,f), the sandwiched hBN layer was isotropically removed via reactive ion etching (RIE) to form an underetched region of width d c between the top and bottom electrode (Figure c,g). Using SF 6 as the process gas increases the etch isotropy and hence lateral etching rate in the normally vertical directed RIE due to a high density of SF 5 * and F* radicals, which in turn are responsible for bulk etching. − The process steps, including spin-coating of the donor–acceptor polymer poly(diketopyrrolopyrrole-terthiophene) (PDPP), removal of PDPP via directional RIE, and deposition of the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI]) as the gate electrode, complete the devices . Using ionic liquids as gate care should be taken to not exceed the electrochemical window which is defined by the difference between the oxidation and reduction potential of cations and anions.…”

Section: Resultsmentioning

confidence: 99%

High-Performance Vertical Organic Transistors of Sub-5 nm Channel Length

et al. 2021

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Miniaturization of electronic circuits increases their overall performance. So far, electronics based on organic semiconductors has not played an important role in the miniaturization race. Here, we show the fabrication of liquid electrolyte gated vertical organic field effect transistors with channel lengths down to 2.4 nm. These ultrashort channel lengths are enabled by using insulating hexagonal boron nitride with atomically precise thickness and flatness as a spacer separating the vertically aligned source and drain electrodes. The transistors reveal promising electrical characteristics with output current densities of up to 2.95 MA cm–2 at −0.4 V bias, on–off ratios of up to 106, a steep subthreshold swing of down to 65 mV dec–1 and a transconductance of up to 714 S m–1. Realizing channel lengths in the sub-5 nm regime and operation voltages down to 100 μV proves the potential of organic semiconductors for future highly integrated or low power electronics.

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Section: Resultsmentioning

confidence: 99%

High-Performance Vertical Organic Transistors of Sub-5 nm Channel Length

et al. 2021

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High Temperature Gradient Pirani Micro-Sensor Designed and Tested for Aerodynamic Wall Pressure Measurement

et al. 2022

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Electropolishing and Shaping of Micro-Scale Metallic Features

2022

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Electropolishing (EP) is most widely used as a metal finishing process. It is a non-contact electrochemical process that can clean, passivate, deburr, brighten, and improve the biocompatibility of surfaces. However, there is clear potential for it to be used to shape and form the topology of micro-scale surface features, such as those found on the micro-applications of additively manufactured (AM) parts, transmission electron microscopy (TEM) samples, micro-electromechanical systems (MEMs), biomedical stents, and artificial implants. This review focuses on the fundamental principles of electrochemical polishing, the associated process parameters (voltage, current density, electrolytes, electrode gap, and time), and the increasing demand for using environmentally sustainable electrolytes and micro-scale applications. A summary of other micro-fabrication processes, including micro-milling, micro-electric discharge machining (EDM), laser polishing/ablation, lithography (LIGA), electrochemical etching (MacEtch), and reactive ion etching (RIE), are discussed and compared with EP. However, those processes have tool size, stress, wear, and structural integrity limitations for micro-structures. Hence, electropolishing offers two-fold benefits of material removal from the metal, resulting in a smooth and bright surface, along with the ability to shape/form micro-scale features, which makes the process particularly attractive for precision engineering applications.zx3

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Optimization of Reactive-Ion Etching (RIE) parameters to maximize the lateral etch rate of silicon using SF6/N2 gas mixture: An alternative to etching Si in MEMS with Au components

Cited by 3 publications

References 12 publications

High-Performance Vertical Organic Transistors of Sub-5 nm Channel Length

High-Performance Vertical Organic Transistors of Sub-5 nm Channel Length

High Temperature Gradient Pirani Micro-Sensor Designed and Tested for Aerodynamic Wall Pressure Measurement

Electropolishing and Shaping of Micro-Scale Metallic Features

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