Optimization of Ion Implanted Low-High-Low Impurity Profile for Silicon n⁺pp⁺SDR Diode

Optimized Ion Implantation Profiles for the p-n Junction Using Forth Moment Approach for Application in High Frequency VLSI Circuits

“…Thus we suggest the use of flash lamp annealing technique for a very short period to keep the change in profile negligible. This profile was earlier approximated as the combination of two half Gaussian distributions that join at a modal projected range (which is usually called the third moment approach) [7,8]. However, this approximation can not generate the tail region of the profile that is obtained from the experimental results.…”

“…The results show that the device characteristics vary a lot with the change in fabrication parameters. Similarly, the authors have attempted for ion implantation profiles studies for IMPATT devices in their earlier work [7,8] using an approximated two moments Gaussian distribution (third moment approach) which failed to incorporate the large tailing characteristics and as a result was not suitable to obtain the proper profile in IMPATT devices. This can be accurately represented only by using a fourth moment approach [9].…”

Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATT

“…It can be realized from most of the semiconductor materials. Simulation has been an important tool for performance analysis of IMPATT devices [1][2][3][4][5][6][7][8][9][10]. The quality and acceptability of the simulation results mostly depends upon the quality of material data used for the same.…”