Optimized Ion Implantation Profiles for the p-n Junction Using Forth Moment Approach for Application in High Frequency VLSI Circuits

Abstract

The ion implantation based impurity doping profile across a p-n junction can be represented accurately using Pearson's fourth moment approach. The high-frequency characteristics of the reverse biased p-n junction (IMPATT diodes) are computed using different ion implantation profiles. It has been observed that the microwave properties of IMPATT diodes are very sensitive to the change in doping profiles. The optimized ion implantation profiles are suggested for different frequency bands to fabricate the reverse biased p-n junction for application in high-frequency circuits.