2003
DOI: 10.1117/12.518062
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Optimization of EUVL reticle thickness for image placement accuracy

Abstract: Extreme ultraviolet lithography (EUVL) is one of the leading candidates for next-generation lithography in the sub-65 nm regime. The International Technology Roadmap for Semiconductors proposes overlay error budgets of 18 nm and 13 nm for the 45 nm and 32 nm nodes, respectively. Full three-dimensional finite element (FE) models were developed to identify the optimal mask thickness to minimize image placement (IP) errors. Five thicknesses of the EUVL reticle have been investigated ranging from 2.3 mm to 9.0 mm.… Show more

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“…The principals for both out-of-plane deviation (OPD) and in-plane-deviation (IPD) are shown in Figure 4. Several papers have been published regarding the flatness and clamp [5].…”
Section: Po -Magnificationmentioning
confidence: 99%
“…The principals for both out-of-plane deviation (OPD) and in-plane-deviation (IPD) are shown in Figure 4. Several papers have been published regarding the flatness and clamp [5].…”
Section: Po -Magnificationmentioning
confidence: 99%