Optimization of ClusterCarbon™ process parameters for strained Si lattice

Sekar, K.; Krull, W.; Horsky, T. N.; Feudel, Thomas; Krüger, Christian; Flachowsky, S.; Ostermay, Ina

doi:10.1016/j.mseb.2008.09.039

Cited by 5 publications

(3 citation statements)

References 7 publications

(8 reference statements)

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“…It has been shown that these molecular carbon implants behave very similarly to implants with molecular boron. For the stress application, most of the work to date has utilized the C7 carbon molecule [9]. However, the applications of carbon implant are very different from boron.…”

Section: Molecular Carbon Implantation Withmentioning

confidence: 99%

Extension of the Si:C Stressor Thickness by Using Multiple ClusterCarbon™ Species

Sekar¹,

Krull²

2011

AIP Conference Proceedings

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Epitaxial 3C-SiC nanocrystal formation at the SiO 2 / Si interface by combined carbon implantation and annealing in CO atmosphere Abstract. ClusterCarbon implantation is now well established as an attractive alternative for producing stress in advanced NMOS devices. ClusterCarbon has the advantage over monomer carbon implant in it's self-amorphization feature, eliminating the need for PAI implantation while producing highly substitutional carbon incorporation. To date, the limitation of this approach has been the high energy limit, due to the extraction limit of the available production tools for the preferred carbon species, which has been the C7Hx molecule. It is noted that the C7 species is produced by the breakup of the parent C14H14 molecule in the ion source. It is further noted that the preferred method of producing the Si:C stress layer is a multiple implant sequence with ClusterCarbon implants at various energies and doses designed to produce a carbon profile which is constant in-depth. The stressor thickness limit using C7 is known to be about 40nm, which is less than the stressor thickness used in the conventional SiGe process for PMOS. In this work, it is shown that utilizing the C5 molecule which is also available from the breakup of C14H14 enables the stressor layer thickness to be extended to at least 60nm, which is consistent with the conventional SiGe process. It will be shown that one additional C5 implant, performed after a standard C7 multiple implant sequence, can produce the extension of the stressor thickness while maintaining the flat depth profile. A detailed process characterization will be shown for this new process sequence.

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Section: Molecular Carbon Implantation Withmentioning

confidence: 99%

Extension of the Si:C Stressor Thickness by Using Multiple ClusterCarbon™ Species

Sekar¹,

Krull²

2011

AIP Conference Proceedings

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“…The first is the strained Si:C solid-phase epitaxy (SPE) by direct C ion implantation into Si followed by recrystallization annealing. It was recently reported that high-temperature millisecond (ms) annealing, such as nonmelt laser annealing [11][12][13][14] or flash lamp annealing [15,16], allows extremely rapid heating and cooling within a few ms, enabling achievement of a high-C metastable activation above the solid solubility of C in Si (e.g., 3.5 x 1017 cm· 3 at the melting point). The second is by post-implant amorphization and regrowth to activate inactive P atoms in heavily P-doped Si (Si:P) alloy epitaxially grown at a high working temperature (t > 650°C).…”

Section: Introductionmentioning

confidence: 99%

Modifications of growth of strained silicon and dopant activation in silicon by cryogenic ion implantation and recrystallization annealing

Itokawa

Berliner²,

Teehan³

et al. 2012

2012 12th International Workshop on Junction Technology

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Formation of heavy C andlor P doping Si alloy with a strain andlor low resistivity in FinFET SID having only {I 10} plane on fin sidewall poses a challenge because, if the CY D selective epitaxy typically used in recent SID process integration is employed, it is extremely difficult to grow heavily doped Si alloys with defect-free microstructure on {11O} crystallographic plane.We propose the combination of cryogenic ion-implant amorphization followed by nonmelt laser annealing regrowth for both strained C-incorporated Si solid-phase epitaxy and improvement of P-activation in heavily P-doped Si alloy epitaxially grown film, while annihilating defects. In this paper, the diffusion and the activation of C atoms and P atoms in Si with C additive are investigated for different nonmelt laser annealing conditions. Additionally, the influence of cryogenic implantation of Si+ into amorphized P-doped Si epitaxial layer followed by nonmelt laser annealing recystallization on the diffusion and activation of P atoms in Si is discussed.

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“…With the only monomer carbon implant approach, an extra Ge pre-amorphization (Ge-PAI) step is required to obtain a higher percentage of substitutional carbon, [C] subs , in the Si:C layer (2). But with the self-amorphizing capability of ClusterCarbon implant (thus avoiding an extra Ge-PAI step) it has been shown that one can introduce about 2% [C] subs after suitable anneal (3). Thus Si:C formation by ClusterCarbon implant is more appealing and a promising contender for high performance device applications.…”

Section: Introductionmentioning

confidence: 99%

(Invited) Strained Si:C Using ClusterCarbon Implant

Sekar¹,

Krull²

2010

ECS Trans.

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We discuss the use of ClusterCarbon implant to obtain Si:C stressor layers for strain engineering applications in advanced technology nodes. ClusterCarbon implant with its self-amorphizing capability is exploited to achieve both an abrupt and shallow junction for Phos profiles. Various carbon implant conditions are being experimented for a given phosphorus implant dose under flash and spike anneal conditions. We discuss the results to address the trade-off between phosphorus activation and carbon substitution along with the junction depth and abruptness. An optimum anneal and carbon implant condition is required to achieve higher carbon substitution along with a reasonably low sheet resistance value.

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Optimization of ClusterCarbon™ process parameters for strained Si lattice

Cited by 5 publications

References 7 publications

Extension of the Si:C Stressor Thickness by Using Multiple ClusterCarbon™ Species

Extension of the Si:C Stressor Thickness by Using Multiple ClusterCarbon™ Species

Modifications of growth of strained silicon and dopant activation in silicon by cryogenic ion implantation and recrystallization annealing

(Invited) Strained Si:C Using ClusterCarbon Implant

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