Abstract:Formation of heavy C andlor P doping Si alloy with a strain andlor low resistivity in FinFET SID having only {I 10} plane on fin sidewall poses a challenge because, if the CY D selective epitaxy typically used in recent SID process integration is employed, it is extremely difficult to grow heavily doped Si alloys with defect-free microstructure on {11O} crystallographic plane.We propose the combination of cryogenic ion-implant amorphization followed by nonmelt laser annealing regrowth for both strained C-incor… Show more
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