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Conductive hafnium nitride films were deposited from a plasma-assisted atomic layer deposition ͑PA-ALD͒ process using a metallorganic hafnium precursor, tetrakis͑ethylmethylamino͒hafnium ͑TEMAH͒, using H 2 plasma as a reducing agent, at a substrate temperature of 250°C. The effects of radio frequency plasma pulse time and power on film resistivity, composition, and microstructure were investigated. The deposited films consisted of cubic HfN phase as shown by X-ray diffraction analysis, and the resistivity ranged from ϳ2300 to 8200 ⍀ cm depending on the plasma conditions. The most conductive films were observed to result from conditions of higher plasma power, which is attributed to microstructural modifications as well as a decrease in N:Hf ratio, which approached unity at the highest plasma powers employed. Carbon incorporation in the form of HfC x phase was shown to be beneficial in terms of improving both post-rapid-thermal-anneal stability and electrical conductivity. A midgap work function ͑4.63 eV͒ was obtained for a HfN x electrode structure integrated into a metal-oxide-semiconductor capacitor featuring a SiO 2 dielectric.

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