Optimisation of interaction parameters for GaxIn1−xAsyP1−y solid solutions using gas-solid equilibrium data and a sublattice model

Lourdudoss, Sebastian; Sichen, Du; Kjebon, O.

doi:10.1016/0364-5916(94)90017-5

Cited by 4 publications

(1 citation statement)

References 17 publications

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“…For examwhere K is the equilibrium constant of the overall Reaction ple, at the temperatures at and below 600 ЊC, the theoretical [2], whose temperature dependence is given as trend is ln K ϭ Ϫ21. [5], [6], [7], and [10] were The trend of the experimental growth rate is almost similar to the theoretically predicted trend. [5], [6], [7], and [10] were The trend of the experimental growth rate is almost similar to the theoretically predicted trend.…”

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confidence: 75%

Rapid epitaxial growth of conducting and insulating III-V compounds on (001), (110), (111)A, (311)A, and (311)B surfaces by hydride vapor phase epitaxy

Lourdudoss

Gopalakrishnan

Holz

et al. 1999

Metall Mater Trans A

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Rapid growth of conducting or insulating InP, GaAs, Ga 0.47 In 0.53 As, and GaAs 0.6 P 0.4 on one or more of substrates of orientations (001), (110), (111)A, (311)A, and (311)B by hydride vapor phase epitaxy (HVPE) is demonstrated. The maximum growth rate of the binaries lies between 12 and 300 m/h and that of the ternaries between 7 and 170 m/h. A simple model is developed to describe the influence of crystallographic orientation on temperature-dependent growth rates. The model is compared with the experimental data. Room-temperature resistivity of insulating InP:Fe can be as high as 5 ϫ 10 9 ohm cm. Temperature-dependent differential resistivity is also analyzed. This feasibility of growing conducting and insulating layers rapidly on substrates of different orientations is very useful for electronic and optoelectronic devices.

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