Rapid epitaxial growth of conducting and insulating III-V compounds on (001), (110), (111)A, (311)A, and (311)B surfaces by hydride vapor phase epitaxy

Abstract

Rapid growth of conducting or insulating InP, GaAs, Ga 0.47 In 0.53 As, and GaAs 0.6 P 0.4 on one or more of substrates of orientations (001), (110), (111)A, (311)A, and (311)B by hydride vapor phase epitaxy (HVPE) is demonstrated. The maximum growth rate of the binaries lies between 12 and 300 m/h and that of the ternaries between 7 and 170 m/h. A simple model is developed to describe the influence of crystallographic orientation on temperature-dependent growth rates. The model is compared with the experimental data. Room-temperature resistivity of insulating InP:Fe can be as high as 5 ϫ 10 9 ohm cm. Temperature-dependent differential resistivity is also analyzed. This feasibility of growing conducting and insulating layers rapidly on substrates of different orientations is very useful for electronic and optoelectronic devices.

Progress in bulk GaN growth

“…[114] Further Huang and Xu et al also demonstrated the nanoscale anisotropic dislocation behavior in GaN substrate. [112] They presented nanoindentation experiments performed on the three principal surfaces, (0001), (11)(12)(13)(14)(15)(16)(17)(18)(19)(20), and (10-10), of GaN substrate. CL and cross-sectional transmission electron microscopy (XTEM) measurements show that there are two primary dislocation slip planes ((0001) and (10-11) planes) for c-plane GaN, while there is only one most favorable dislocation slip plane ((0001) plane) for nonplanar GaN during plastic deformation.…”

“…Besides the abovementioned LEDs grown on the Ga-face GaN, LEDs grown on non-polar GaN substrates are another hot research field because of the reduction of quantum-confined Stark effect in 066105-11 this structure. Sato et al demonstrated a green LED with a peak emission wavelength of 516 nm grown on semipolar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) bulk GaN substrate in 2007. [150] The performance has improved significantly in recent years.…”

“…[16] The third growth method is HVPE, which is initially used in the growth of GaAs and InP. [17] With HVPE's advantage of high growth rate, i.e., several hundred micrometers per hour, GaN can be grown up to several millimeters, which is thick enough for the fabrication of bulk substrates. However, since GaN seed crystal is hardly available, thick GaN films have to be grown on foreign substrates, such as sapphire, GaAs, and silicon.…”

Fast Growth Synthesis of GaAs Nanowires with Exceptional Length

“…Early HVPE experiments demonstrated that high-quality epilayers had been grown at growth rates higher than 100 µm/h. 42 Joyce et al observed that increasing MOVPE precursor flows and consequently the growth rate decreased the NW twin density. 30 The outstanding growth rate of Si NWs grown from disilane (31 µm/ min) 32 and our observations for the binary GaAs compound suggest that low defect density semiconductor nanowires can be grown very fast.…”

“…It is generally assumed that a high growth rate yields lower crystalline quality. Early HVPE experiments demonstrated that high-quality epilayers had been grown at growth rates higher than 100 μm/h . Joyce et al observed that increasing MOVPE precursor flows and consequently the growth rate decreased the NW twin density .…”