Analysis of regrowth evolution around VCSEL type mesas

Messmer, E. Rodriguez; Lourdudoss, Sebastian

doi:10.1016/s0022-0248(00)00556-x

Cited by 5 publications

(1 citation statement)

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“…In the region far from the mesa, the growth is purely dominated by the vertical growth from the etched substrate and it is slower than that close to the ridge. It has been shown in (18) different high index crystallographic planes such as (113) emerge close to the ridge side wall. These high index planes can enhance the growth rate close to the ridge leading to quick planarization compared to the region far from the ridge where growth is largely dominated by growth from (100) plane.…”

Section: Resultsmentioning

confidence: 99%

A Quick and a Flexible Hydride Vapor Phase Epitaxy Process to Achieve Buried Heterostructure Quantum Cascade Lasers

Metaferia

Simozrag

Junesand³

et al. 2014

ECS Trans.

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BH-QCLs were fabricated with regrowth of semi-insulating InP:Fe in hydride vapor phase epitaxy reactor. Two types of lateral ridge QCL designs were considered: (i) closely spaced ridges with double trenches and (ii) widely and uniformly spaced ridges. The etched depth varies from 6 to 15 µm in the former and 6 to10 µm in the latter. Double trenches of about 14 µm deep take only < 40 minutes to planarize while the same time is needed to planarize about 8 µm deep trenches with uniform ridges. In any case the achieved growth rate is higher by at least one order of magnitude than that can be achieved in MBE and MOVPE. Some fabricated BH-QCLs are characterized and they exhibit spatially monomode (TMoo) laser with an output power of as high as 2.4 W and wall plug efficiency of ~8-9% at RT under CW operation.

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Section: Resultsmentioning

confidence: 99%