Dopant distribution in selectively regrown InP:Fe studied by time-resolved photoluminescence

Time-resolved micro-photoluminescence studies of deep level distribution in selectively regrown GaInP:Fe and GaAs:Fe

“…To obtain quantitative data on the Fe concentrations, the TRPL experiment is simulated using a numerical model [14], which takes into account radiative and nonradiative carrier recombination, carrier diffusion and reabsorption of photons in the material. The model accounts for trapping to the Fe centres as well as to unintentional defects (such as the EL2 level in GaAs), and surface states.…”

“…The analysis method used to obtain the active Fe concentration is based on the fact that the rate of photoexcited carrier trapping onto the active Fe centres, and thus the PL intensity decay rate, depends on the Fe concentration [8,12,13]. Through comparison of the measured PL decay with the previous measurements on SIMS-calibrated samples ( [12] for GaAs, [13] for GaInP) and results from computer simulations of the TRPL experiments [14], we can evaluate trap distribution in regrown GaAs and GaInP layers with a micrometre resolution.…”

Characterization of iron doped indium phosphide as a current blocking layer in buried heterostructure quantum cascade lasers

“…Gaardner et al have shown, via time resolved photoluminescene (TRPL), a 40% decrease in Fe incorporation within distances of 5 lm lateral to the mesa compared to bulk values. 16 This inhomogeneity may come from different lateral and vertical growth dynamics. Around the device mesa, growth takes place laterally from the sidewall and vertically from the substrate.…”

“…The side wall and the substrate have different orientations and provide different bonding configurations which lead to different Fe incorporation. 16 If the incorporation of Fe is low near the mesa wall, it will lead to an unintended leakage path. Such effects as well as the impact ionization from traps may increase the leakage currents compared to the estimated value in our calculations.…”