Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire

Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25- $\mu\hbox{m}$ AlGaN/GaN HEMTs

“…Assuming these are GaN bulk traps 0.7 eV below the conduction band, gives a cross-section of 10 -12 cm 2 . This is reasonably consistent with published energy levels for Fe in GaN but the cross-section is much larger [15].…”

Deep traps in GaN-based structures as affecting the performance of GaN devices

“…These experiments allowed to estimate the electron capture cross section of the Fe 3+ state as 1.9 Â 10 À15 cm 2 and the hole capture cross section by the Fe 2+ as 10 À15 cm 2 , thus suggesting that Fe could be an efficient recombination center in GaN [176].…”

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

“…This effect has not been reported before for GaN doped with Ni, which has in fact been rarely studied. However, Fe doping of GaN indeed leads to a strong decrease of the PL intensity [47] and of the luminescence decay times even at fairly low concentrations [48] by introducing very efficient non-radiative recombination channels. Ni and Fe are both 3d elements, and are known to possess similar properties as dopants in conventional Ⅲ-Ⅴ semiconductors.…”