Direct comparison of catalyst-free and catalyst-induced GaN nanowires

Chèze, Caroline; Geelhaar, Lutz; Brandt, O.; Weber, Walter M.; Riechert, H.; Munch, S.; Rothemund, Ralph; Reitzenstein, Stephan; Forchel, A.; Kehagias, Th.; Komninou, Ph.; Dimitrakopulos, G. P.; Karakostas, Th.

doi:10.1007/s12274-010-0013-9

Cited by 161 publications

(126 citation statements)

References 49 publications

(67 reference statements)

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“…21 They found that by using Ni as catalyst, more basal-plane stacking faults can be observed (shown in Fig. 3).…”

Section: Self-organized Growth Of Gan Nanorodsmentioning

confidence: 97%

“…They suggested four possible explanations for the occurrence of the stacking faults which are all related to the presence of the catalyst at the nanorod tip where growth takes place. 21 Firstly, the binding configuration of the GaN nucleus at the NW-catalyst interface might adopt the zinc-blende (ZB) configuration of the cubic solid NiGa mixture. Secondly, the Ni catalyst could be incorporated to some extent, which could stabilize the ZB structure.…”

Section: Self-organized Growth Of Gan Nanorodsmentioning

confidence: 99%

“…Furthermore, a triple phase line GaN-GaNi-vapor is introduced by the catalyst, which could modify the energetically favorable structure (ZB or WZ), as described by Glas et al for WZ GaAs nanorods. 21,22 Finally, the lower surface mobility of adatoms at tip of NW, which may be induced by catalyst particles, could also lead to formation of stacking faults. 21 Catalyst-assisted growth with Ni also leads to some differences in photoluminescence spectra compared to GaN nanorods grown catalyst-free.…”

Section: Self-organized Growth Of Gan Nanorodsmentioning

confidence: 99%

“…21,22 Finally, the lower surface mobility of adatoms at tip of NW, which may be induced by catalyst particles, could also lead to formation of stacking faults. 21 Catalyst-assisted growth with Ni also leads to some differences in photoluminescence spectra compared to GaN nanorods grown catalyst-free. First of all, the overall integrated intensity and the peak intensity of the (D 0 , X) line of the catalyst-free grown nanorods are, respectively, 6 and 25 times higher than the corresponding values for the catalystinduced nanorods.…”

Section: Self-organized Growth Of Gan Nanorodsmentioning

confidence: 99%

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GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

490

394

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

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“…21 They found that by using Ni as catalyst, more basal-plane stacking faults can be observed (shown in Fig. 3).…”

Section: Self-organized Growth Of Gan Nanorodsmentioning

confidence: 97%

Section: Self-organized Growth Of Gan Nanorodsmentioning

confidence: 99%

Section: Self-organized Growth Of Gan Nanorodsmentioning

confidence: 99%

Section: Self-organized Growth Of Gan Nanorodsmentioning

confidence: 99%

See 2 more Smart Citations

GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

490

394

View full text Add to dashboard Cite

show abstract

“…Ni for the case of InN nanowires). For GaN nanowires, this has been discussed for example by Cheze et al [1]. In this context we would like to stress again, that the optical properties discussed in the paper refer to catalyst-free InN nanowires.…”

mentioning

confidence: 63%