Compositional analysis on quaternary GaxIn1 − xAsyP1 − y vapour phase epitaxy: a comparison between theory and experiment

Gopalakrishnan, N.; Dhanasekaran, R.; Lourdudoss, Sebastian

doi:10.1016/s0254-0584(97)80186-1

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Rapid epitaxial growth of conducting and insulating III-V compounds on (001), (110), (111)A, (311)A, and (311)B surfaces by hydride vapor phase epitaxy

Lourdudoss

Gopalakrishnan

Holz

et al. 1999

Metall Mater Trans A

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Rapid growth of conducting or insulating InP, GaAs, Ga 0.47 In 0.53 As, and GaAs 0.6 P 0.4 on one or more of substrates of orientations (001), (110), (111)A, (311)A, and (311)B by hydride vapor phase epitaxy (HVPE) is demonstrated. The maximum growth rate of the binaries lies between 12 and 300 m/h and that of the ternaries between 7 and 170 m/h. A simple model is developed to describe the influence of crystallographic orientation on temperature-dependent growth rates. The model is compared with the experimental data. Room-temperature resistivity of insulating InP:Fe can be as high as 5 ϫ 10 9 ohm cm. Temperature-dependent differential resistivity is also analyzed. This feasibility of growing conducting and insulating layers rapidly on substrates of different orientations is very useful for electronic and optoelectronic devices.

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