Hydride vapor phase epitaxy revisited

Lourdudoss, Sebastian; Kjebon, O.

doi:10.1109/2944.640630

Cited by 68 publications

(46 citation statements)

References 121 publications

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“…HVPE [8] domain structures, has the advantage of rapid growth under near-equilibrium conditions. Rapid growth presents the possibility of very thick OP-GaAs structures (up to 1 mm), which are necessary because the pump laser is incident on the side of the layer.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of thick GaAs on orientation-patterned wafers for nonlinear optical applications

Bliss¹,

Lynch²,

Weyburne³

et al. 2006

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Epitaxial growth of thick GaAs on orientation-patterned wafers for nonlinear optical applications

Bliss¹,

Lynch²,

Weyburne³

et al. 2006

Journal of Crystal Growth

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“…It seems that hydrate vapor phase epitaxy 14 (HVPE) is the preferred growth method but liquid phase epitaxy 15 (LPE) may also be a plausible technique. The contemplated fabrication sequence is illustrated in Fig.…”

Section: What Do We Need From the Crystal Grower?mentioning

confidence: 99%

Impregnated Semiconductor Scintillator

Luryi

2009

Selected Topics in Electronics and Systems

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A semiconductor scintillation-type gamma radiation detector is discussed in which the gamma-ray absorbing semiconductor body is impregnated with multiple small direct-gap semiconductor inclusions of bandgap slightly narrower than that of the body. If the typical distance between them is smaller than the diffusion length of carriers in the body material, the photo-generated electrons and holes will recombine inside the impregnations and produce scintillating radiation to which the widegap body is essentially transparent. In this way it is possible to implement a semiconductor scintillator of linear dimensions exceeding 10 cm.

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“…Finally, the regrowth should not result in appearance of crystal growth artifacts (e.g., "rabbit ears") near the mesa (or pillar) edges [36]. HVPE is a technique that can meet all these demands [37].…”

Section: Epitaxial Regrowthmentioning

confidence: 99%

Advanced Fabrication of Single-Mode and Multi-Wavelength MIR-QCLs

et al. 2016

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Abstract:In this article we present our latest work on the optimization of mid-infrared quantum cascade laser fabrication techniques. Our efforts are focused on low dissipation devices, broad-area high-power photonic crystal lasers, as well as multi-wavelength devices realized either as arrays or multi-section distributed feedback (DFB) devices. We summarize our latest achievements and update them with our most recent results.

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Hydride vapor phase epitaxy revisited

Cited by 68 publications

References 121 publications

Epitaxial growth of thick GaAs on orientation-patterned wafers for nonlinear optical applications

Epitaxial growth of thick GaAs on orientation-patterned wafers for nonlinear optical applications

Impregnated Semiconductor Scintillator

Advanced Fabrication of Single-Mode and Multi-Wavelength MIR-QCLs

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