2009
DOI: 10.1142/9789814273022_0019
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Impregnated Semiconductor Scintillator

Abstract: A semiconductor scintillation-type gamma radiation detector is discussed in which the gamma-ray absorbing semiconductor body is impregnated with multiple small direct-gap semiconductor inclusions of bandgap slightly narrower than that of the body. If the typical distance between them is smaller than the diffusion length of carriers in the body material, the photo-generated electrons and holes will recombine inside the impregnations and produce scintillating radiation to which the widegap body is essentially tr… Show more

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Cited by 2 publications
(12 citation statements)
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“…The "problem" is that we can obtain a reasonable fit also by assuming an exponential distribution (see footnote b above) with the length D L as an adjustable parameter [14]. For example, the 18 3 D 2 10 cm N − = × data for ( ) E R are well fit with D 45µm L = , cf. the exponential curve in Fig.…”
Section: Transmission and Reflection Luminescence Spectramentioning
confidence: 99%
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“…The "problem" is that we can obtain a reasonable fit also by assuming an exponential distribution (see footnote b above) with the length D L as an adjustable parameter [14]. For example, the 18 3 D 2 10 cm N − = × data for ( ) E R are well fit with D 45µm L = , cf. the exponential curve in Fig.…”
Section: Transmission and Reflection Luminescence Spectramentioning
confidence: 99%
“…We decided to explore the possibilities that would arise with an all-epitaxial fast-growth technique. This has led to our invention [18] described below.…”
Section: Layered Scintillator Based On Photon-assisted Transport Of Hmentioning
confidence: 99%
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