Optically pumped lasing and electroluminescence in ZnO/GaN nano-heterojunction array devices

Abstract

The preparation of a highly ordered ZnO/GaN nano-heterojunction array is introduced. Combining the merits of nanolaser and plasmonic Fabry-Perot nanolaser, we designed and fabricated an ultraviolet nanolaser with Ag-dielectric hybrid film-coated n-ZnO nanowires (NWs) array on p-GaN substrate. Ultraviolet random lasing behavior from the ZnO/GaN nano-heterojunction array has been demonstrated with both optical and electrical pumping, where the surface plasmon enhancement effect in the lasing process is discussed. The numerical simulation results show the surface plasmon at the Ag/SiO 2 /ZnO interface may be excited and strongly compress the waveguided modes, which were found to optimize the lasing spectrum and increase the light intensity compared to the bare NWs array. With the electric pumping of the device, the electroluminescence parameters are characterized and the underlying mechanism is also discussed.

Improved optical performance in circular-grating distributed feedback nanoplasmonic lasers

“…All the components are integrated as a CGDFB nanoplasmonic laser. where the light field is confined to the SiO2 insulating dielectric layer between the CdS nanorods and the silver film [30,31]. Moreover, a two-dimensional second-order circular distributed feedback grating is used as the laser resonator, which enables the laser to emit circularly symmetric low-divergence beams [32,33].…”

Excellent optoelectronic applications and electrical transport behavior of the n-WO3 nanostructures/p-diamond heterojunction: a new perspective

“…For example, the insulating cement of the PMMA can effectively isolate the conduction between the NRs. The electrodes can be constructed following the device structure (figure 2(a)) of ZnO NWs array on a GaN thin film, reported by Huang et al [22]. Metal-semiconductor-metal-Au integrated electrode has a low capacitance per unit area, and thus, it remarkably enhances the speed of the opto-device [17].…”

Lasing Behavior of a Single ZnO Nanowire Resonating in Fabry–Perot Mode under Pressure

“…The n-type ZnO nanowires are synthesized on a p-type GaN substrate with the precursors of Zn strips (purity 99.99%) and high pure O 2 (purity 99.99%) by chemical vapor deposition (CVD) method in a quartz tube furnace as described in our previous work. 45 Then, the ZnO NWs are transferred from the substrate onto the top surface of one diamond anvil with a tungsten tip positioned on a manipulator. In order to characterize the lasing performance of a single ZnO nanowire, these nanowires are stirred with the tungsten tip several times to make them isolated from each other.…”