2020
DOI: 10.1021/acs.jpcc.0c00145
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Lasing Behavior of a Single ZnO Nanowire Resonating in Fabry–Perot Mode under Pressure

Abstract: In virtue of mode tunability and inherent optical feedback, the lasing of semiconductor optical cavity has become the research focus of optoelectronic devices integrated on chip and optical systems to explore the strong light−matter coupling. In this work, the lasing behavior of a single ZnO nanowire is investigated under pressure with a diamond anvil cell (DAC). The stimulated emission blueshifts faster than the spontaneous emission with pressure increasing, which is confirmed by the color difference between … Show more

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Cited by 3 publications
(4 citation statements)
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“…In this section, we briefly summarize a few studies on high-pressure-induced optical property changes in less commonly encountered NPs. The lasing performance of a single ZnO NW was investigated under pressure . It was found that, with increasing pressures below the WZ to RS phase transition point, the stimulated emission blue-shifted faster than the spontaneous emission as evidenced by the color differences between the middle and the ends of NWs.…”
Section: Pressure-induced Property Changes In Inorganic Npsmentioning
confidence: 99%
See 1 more Smart Citation
“…In this section, we briefly summarize a few studies on high-pressure-induced optical property changes in less commonly encountered NPs. The lasing performance of a single ZnO NW was investigated under pressure . It was found that, with increasing pressures below the WZ to RS phase transition point, the stimulated emission blue-shifted faster than the spontaneous emission as evidenced by the color differences between the middle and the ends of NWs.…”
Section: Pressure-induced Property Changes In Inorganic Npsmentioning
confidence: 99%
“…The lasing performance of a single ZnO NW was investigated under pressure. 161 It was found that, with increasing pressures below the WZ to RS phase transition point, the stimulated emission blue-shifted faster than the spontaneous emission as evidenced by the color differences between the middle and the ends of NWs. This observation was rationalized as the result of interplay and balancing among exciton binding energies and the factors that hinder exciton formation, such as pressure strengthening of photons and pressure-induced defects within the NWs.…”
Section: Pressure-induced Property Changes In Inorganic Npsmentioning
confidence: 99%
“…Furthermore, semiconductor NWs have superior strain relaxation ability, which presents excellent opportunities for the practical application of nanolasers in silicon photonics . To date, optically or electrically pumped nanolasers have been realized in various inorganic semiconductor NWs such as InP, GaAs, ZnO, , CdS, and GaN . Nonetheless, most of these NWs have been fabricated through the “top-down etching” and “bottom-up selective area epitaxy” methods, , which require numerous fabrication steps as well as patterning techniques.…”
Section: Introductionmentioning
confidence: 99%
“…The design of a quantum well structure is the most desirable success for this method [14,15]. The second is based on the tuning of the cavities, including individual cavity size and coupled structures [16][17][18]. Cavity size-related mode evaluation, single mode operation, or even four-wave mixing can be obtained with this method [19,20].…”
Section: Introductionmentioning
confidence: 99%