Thermal effect induced dynamically lasing mode tuning in GaN whispering gallery microcavities

Qin, Feifei; Zhu, Gangyi; Wang, Ru; Wang, Xiaoxuan; Lu, Junfeng; Yang, Ying; Qiu, Guoqing

doi:10.1088/1361-6463/abefbb

Cited by 4 publications

(4 citation statements)

References 45 publications

(32 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Considering the cavity structures in figure 2(a) and the spectral properties in figures 2(a)-(c), the most likely lasing In addition to the resonant mode and the Q factor, the threshold value and exciton dynamics properties are important features for the laser action of a semiconductor and can be used to distinguish laser action and other resonant modes in the passive cavities [27]. As shown in the threshold curves presented in figure 2 with cavity t According to our previous work, the spontaneous emission lifetime of a GaN-Si epitaxial wafer without a cavity is 198.4 ps [22]. The Purcell factor for Positions A and B near the thresholds are calculated to be 3.7 and 5.6, respectively.…”

Section: Structural and Optical Properties Of Individual Benz-shaped ...mentioning

confidence: 95%

“…Both thermally induced changes in the gain spectrum and changes in the refractive index can be used to realize lasing mode manipulation in GaN cavities. For example, our previous work [22] realized thermally tuned lasing operation in individual GaN microdisks with a heating stage as a thermal source. More importantly, an electro-optic guided-mode resonance tuning process at the chip level with hybrid Si/GaN microring resonators has been successfully demonstrated by Thubthimthong et al [23] and Hashida et al [24].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Lasing mode manipulation in a Benz-shaped GaN cavity via the Joule effect of individual Ni wires

Qin

Yang

et al. 2023

Nanotechnology

Self Cite

View full text Add to dashboard Cite

Silicon-based gallium nitride lasers are considered potential laser sources for on-chip integration. However, the capability of on-demand lasing output with its reversible and wavelength tunability remains important. Herein, a Benz-shaped GaN cavity is designed and fabricated on a Si substrate and coupled to a Ni metal wire. Under optical pumping, excitation position-related lasing and exciton combination properties of pure GaN cavity are studied systematically. Under electrically driven, joule thermal of Ni metal wire makes it easy to change the temperature of the cavity. And then, we demonstrate a joule heat-induced contactless lasing mode manipulation in the coupled GaN cavity. The driven current, coupling distance, and excitation position influences the wavelength tunable effect. Compared with other positions, the outer ring position has the highest lasing properties and lasing mode tuning abilities. The optimized structures demonstrate clear wavelength tuning and an even mode switch. The thermal reduction of the band gap is identified to account for the modification of the lasing profile, but the thermo-optic effect is non-negligible under a high-driven current.

show abstract

Section: Structural and Optical Properties Of Individual Benz-shaped ...mentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Lasing mode manipulation in a Benz-shaped GaN cavity via the Joule effect of individual Ni wires

Qin

Yang

et al. 2023

Nanotechnology

Self Cite

View full text Add to dashboard Cite

show abstract

“…GaN microcavities denote the optical dimensional confined GaN micro structures exhibiting singular performances or producing exotic effects, such as low‐threshold lasing, enhanced nonlinear conversion, and directional luminescence. During the past few years, numerous geometries of GaN‐based micro cavities have been investigated, including 1D photonic crystal cavities, [ 101–104 ] nanowire cavities, [ 105–109 ] nanowire waveguides, [ 110–114 ] micro disks, [ 6,115–144 ] etc. These cavities support single mode or multiple modes to realize strong light–matter coupling.…”

Section: Gan‐based Micro Cavitymentioning

confidence: 99%

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Zhao

Liu

Wang

2022

Small

View full text Add to dashboard Cite

are even smaller, only a few MHz, which are far away from the requirement of fast and large data wireless transmission for VLC. [5] To enhance the data transmission rates, complex modulation schemes and/ or equalization have to be utilized, which, however, hinder the further developments and applications. In addition, Si-based optoelectronic devices, like Si PDs, a bluefiltering technology are still used currently for shorter wavelength visible light detection, which suffers from complexity and low light transmittance. Furthermore, considering the development and mature application of GaN-based devices, there is a trend to realize the multifunctional single chip integration. However, the relative low coupling efficiency in the GaNbased optoelectronic devices still cannot meet the requirements. In this case, it is important to develop novel GaN-based optoelectronic devices with superior performances as alternative for miniaturization, simplification, and integration. To solve these problems, the concept of incorporating GaN-based devices with exotic optical resonances has been proposed. [5] Surface plasmons (SPs), microcavities, such as whispering gallery modes (WGMs) and distributed Bragg reflectors (DBR) are common optical resonant structures to improve the performances of GaN-based devices. [6][7][8][9] SPs are intrinsic electromagnetic modes excited at the metal-dielectric interfaces, accompanied with the collective oscillation behaviors of free electrons on the metal-side surfaces. [10] Giant electric field enhancement generates at the interface with exponentially decay along the perpendicular direction. Inside the GaN-based devices, the excitation of SPs can greatly enhance the density of states of the electron-hole pairs and improve the competitiveness of the radiative recombination to the non-radiative recombination. [11] It has also been demonstrated tremendously in early works that using SPs enables a path to break the optical diffraction limit of the semiconductor lasers and boost the light-matter coupling intensities in subwavelength dimensions. [11][12][13][14][15][16][17] In addition, GaN-based microcavities, such as photonics crystals, DBR, and micro disks, can confine and manipulate light. [18][19][20] By matching one or more dimensions of the cavities to the wavelength of the confined light, exotic effects can be produced, such as enhanced luminescence, directional emission, low-threshold lasing, etc. When light illuminates microcavities, the confined electron-hole pairs interact with the cavity photons. Their interaction rate relative to the average Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanism...

show abstract

“…[14,27] Compared with others methods, thermal modulation is a more convenient way to realize mode control. However, most reported works, including our previous work, [28] are based on an external heating stage. An integrated internal heat source is more attractive, since it can make the system much simpler and more efficient.…”

Section: Introductionmentioning

confidence: 99%

Optically pumped wavelength-tunable lasing from a GaN beam cavity with an integrated Joule heater pivoted on Si

et al. 2023

Self Cite

View full text Add to dashboard Cite

Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, PN junction heater integrated gallium nitride-based laser on Si is fabricated. The photoluminescence (PL) properties of the GaN beam cavity are controlled by temperature, and the Joule heater provides electrically driven regulation of temperature. These two features of the cavity make it possible to realize convenient tuning of the lasing properties. The multi-functional GaN beam cavity achieves optically pumped lasing with a single mode near 362.4 nm with high Q factor of 1394. The temperature of this device increases by up 0 ℃ to 5 ℃ under the Joule heating effect. Then, electrical control of the lasing mode is demonstrated. The lasing resonant peak shows a continuous redshift of about 0.5 nm. And it also exhibits dynamic switching of its lasing mode. The lasing modulation can be ascribed to temperature-induced reduction of the bandgap. Our work may be of benefit for external optical modulation for future chip-based optoelectronic devices.

show abstract

Thermal effect induced dynamically lasing mode tuning in GaN whispering gallery microcavities

Cited by 4 publications

References 45 publications

Lasing mode manipulation in a Benz-shaped GaN cavity via the Joule effect of individual Ni wires

Lasing mode manipulation in a Benz-shaped GaN cavity via the Joule effect of individual Ni wires

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Optically pumped wavelength-tunable lasing from a GaN beam cavity with an integrated Joule heater pivoted on Si

Contact Info

Product

Resources

About