Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition

Glaser, E. R.; Kennedy, T. A.; Doverspike, K.; Rowland, L.B.; Gaskill, D. Kurt; Freitas, J. A.; Khan, M. Asif; Olson, D. T.; Kuznia, J. N.; Wickenden, D. K.

doi:10.1103/physrevb.51.13326

Cited by 341 publications

(189 citation statements)

References 43 publications

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“…1͑a͒. The weak yellow luminescence centered at 2.3 eV and the strong donor-acceptor pair ͑DAP͒ luminescence 11,12 at 3.263 eV, with its 92-meV LO-phonon replica at 3.171 eV, are observed at 86 K but not at 300 K. The yellow luminescence indicates the presence of native GaN defects or impurity levels unrelated to the Eu-induced traps.…”

mentioning

confidence: 93%

Effect of optical excitation energy on the red luminescence of Eu3+ in GaN

et al. 2005

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Photoluminescence ͑PL͒ excitation spectroscopy mapped the photoexcitation wavelength dependence of the red luminescence ͑ 5 D 0 → 7 F 2 ͒ from GaN:Eu. Time-resolved PL measurements revealed that for excitation at the GaN bound exciton energy, the decay transients are almost temperature insensitive between 86 K and 300 K, indicating an efficient energy transfer process. However, for excitation energies above or below the GaN bound exciton energy, the decaying luminescence indicates excitation wavelength-and temperature-dependent energy transfer influenced by intrinsic and Eu 3+ -related defects. Native and rare earth-induced defects participate in the energy transfer processes that lead to red light emission in GaN:Eu. 6 An impurity band spreading 370 meV below the conduction band of GaN:Eu has been observed to arise from such defects. 7 Previous measurements of the extended x-ray absorption fine structure show that Er 3+ and Eu 3+ dopants assume a substitutional Ga site with C 3 symmetry. 8,9 Sharp, otherwise forbidden 4f emission lines from Eu 3+ are allowed by symmetry breaking in the GaN host. Nyein et al. recently performed time-resolved photoluminescence ͑PL͒ studies of these emission lines by using both above-and below-band gap excitation. 10 Photoluminescence excitation ͑PLE͒ spectroscopy indicated the impurity band is involved in the energy transfer between the GaN host and the Eu 3+ dopants. In this paper, visible and UV wavelength PLE measurements of GaN:Eu evaluate the excitation wavelength-dependent energy transfer between the GaN host or defects and the Eu 3+ dopants, while temperature-dependent, time-resolved PL ͑TRPL͒ measurements investigate energy transfer and carrier relaxation dynamics.A Eu-doped GaN film was deposited on a p-Si ͑111͒ substrate by solid-source MBE. A thin GaN buffer layer was first deposited at a substrate temperature of 600°C before the main growth took place at 800°C for about 2 h. Details of the growth conditions can be found elsewhere. 4 The Eu cell temperature was 400°C, resulting in a Eu concentration of 8.8ϫ 10 20 cm -3 ͑1 at. % ͒ estimated by secondary ion mass spectrometry. The thickness of the GaN:Eu layer is approximately 2.4 µm. PL spectra were excited by a He-Cd laser ͑E p = 3.815 eV͒, and the tunable light source for PLE spectroscopy was a xenon arc lamp dispersed through an Acton 150 mm monochromator. The luminescence was analyzed by a 0.75 m focal length SPEX single grating monochromator and detected by a thermoelectrically cooled photomultiplier tube ͑Hamamatsu R928͒. Standard lock-in techniques were used for collecting both PL and PLE signals. The pulsed laser source for TRPL measurements was an optical parametric amplifier ͑OPA͒, pumped by a 1 kHz regenerative amplifier seeded by an 80 MHz Ti:sapphire oscillator operating at 800 nm. In this experiment the OPA was tuned between E p = 3.02-4.14 eV while maintaining a pulse intensity of 600 J/cm 2 and pulse width less than 200 fs. The luminescence from the GaN:Eu sample was collected by two UV lenses, spectrall...

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confidence: 93%

Effect of optical excitation energy on the red luminescence of Eu3+ in GaN

et al. 2005

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“…Glaser et al and Hofmann et al reported measurements on optically detected magnetic resonance that indicated the YL transition involved a deep donor, with carbon suggested to be a shallow acceptor. 5,6 The deep donor in these studies was speculated to be a deep double donor due to nitrogen vacancies, though no deep donor level has been verified to date. Similarly, Fischer et al attributed an acceptor site of 230 meV depth to carbon impurities based on thermal quenching experiments on near band edge PL peaks.…”

Section: Introductionmentioning

confidence: 99%

Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy

Green

Mishra

Speck

2004

Journal of Applied Physics

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Carbon tetrabromide (CBr 4 ) was studied as an intentional dopant during rf plasma molecular beam epitaxy of GaN. Secondary ion mass spectroscopy was used to quantify incorporation behavior. Carbon was found to readily incorporate under Ga-rich and N-rich growth conditions with no detectable bromine incorporation. The carbon incorporation ͓C͔ was found to be linearly related to the incident CBr 4 flux. Reflection high-energy electron diffraction, atomic force microscopy and x-ray diffraction were used to characterize the structural quality of the film's postgrowth. No deterioration of structural quality was observed for ͓C͔ from mid 10 17 to ϳ10 19 cm Ϫ3 . The growth rate was also unaffected by carbon doping with CBr 4 . The electrical and optical behavior of carbon doping was studied by co-doping carbon with silicon. Carbon was found to compensate the silicon although an exact compensation factor was difficult to extract from the data. Photoluminescence was performed to examine the optical performance of the films. Carbon doping was seen to monotonically decrease the band edge emission. Properties of carbon-doped GaN are interpreted to be consistent with recent theoretical work describing incorporation of carbon as function of Fermi level conditions during growth.

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“…4(a)]. 19 The implantation of hydrogen into our samples greatly reduced the intensity of the yellow luminescence. The implantation also produced a near infrared luminescence band centered at ~0.95 eV, very similar to a band reported previously that is produced by high-energy electron irradiation.…”

Section: Photoluminescence and Odeprmentioning

confidence: 99%

Spectroscopy of Proton Implanted GaN

Weinstein

Stavola

Song

et al. 1999

MRS Internet j. nitride semicond. res.

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Vibrational spectroscopy, photoluminescence, and optically detected electron paramagnetic resonance (ODEPR) have been used to characterize the defects produced in undoped and Sidoped GaN by the implantation of hydrogen. Several new vibrational bands were found near 3100 cm -1 in GaN that had been implanted with protons. These frequencies are close to those predicted for V Ga -H n complexes, leading to the tentative assignment of the new lines to V Ga defects decorated with different numbers of H atoms. The proton implantation also produces an infrared PL band centered at 0.95 eV and the ODEPR spectrum labeled LE1, both of which were seen previously for electron-irradiated GaN.

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Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition

Cited by 341 publications

References 43 publications

Effect of optical excitation energy on the red luminescence of Eu3+ in GaN

Effect of optical excitation energy on the red luminescence of Eu3+ in GaN

Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy

Spectroscopy of Proton Implanted GaN

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