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Several vibrational bands were observed near 3100 cm−1 in GaN that had been implanted with hydrogen at room temperature and subsequently annealed. Our results indicate that these bands are due to nitrogen-dangling-bond defects created by the implantation that are decorated by hydrogen. The frequencies are close to those predicted recently for VGa–Hn complexes, leading us to tentatively assign the new lines to VGa defects decorated with different numbers of H atoms.

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